Invention Grant
US09583299B2 Iridium tip, gas field ion source, focused ion beam apparatus, electron source, electron microscope, electron beam applied analysis apparatus, ion-electron multi-beam apparatus, scanning probe microscope, and mask repair apparatus
有权
铱尖端，气体离子源，聚焦离子束装置，电子源，电子显微镜，电子束应用分析装置，离子电子多光束装置，扫描探针显微镜和掩模修复装置
- Patent Title: Iridium tip, gas field ion source, focused ion beam apparatus, electron source, electron microscope, electron beam applied analysis apparatus, ion-electron multi-beam apparatus, scanning probe microscope, and mask repair apparatus
- Patent Title (中): 铱尖端，气体离子源，聚焦离子束装置，电子源，电子显微镜，电子束应用分析装置，离子电子多光束装置，扫描探针显微镜和掩模修复装置
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Application No.: US14455338Application Date: 2014-08-08
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Publication No.: US09583299B2Publication Date: 2017-02-28
- Inventor: Tomokazu Kozakai , Osamu Matsuda , Yasuhiko Sugiyama , Kazuo Aita , Fumio Aramaki , Anto Yasaka , Hiroshi Oba
- Applicant: Hitachi High-Tech Science Corporation
- Applicant Address: JP Minato-ku, Tokyo
- Assignee: Hitachi High-Tech Science Corporation
- Current Assignee: Hitachi High-Tech Science Corporation
- Current Assignee Address: JP Minato-ku, Tokyo
- Agency: Banner & Witcoff, Ltd.
- Priority: JP2013-167130 20130809; JP2014-146186 20140716
- Main IPC: H01J1/304
- IPC: H01J1/304 ; H01J37/073 ; H01J37/08 ; G01Q60/10 ; G01Q60/24 ; G01Q70/16 ; H01J37/21 ; H01J37/28
Abstract:
There is provided an iridium tip including a pyramid structure having one {100} crystal plane as one of a plurality of pyramid surfaces in a sharpened apex portion of a single crystal with orientation. The iridium tip is applied to a gas field ion source or an electron source. The gas field ion source and/or the electron source is applied to a focused ion beam apparatus, an electron microscope, an electron beam applied analysis apparatus, an ion-electron multi-beam apparatus, a scanning probe microscope or a mask repair apparatus.
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