Invention Grant
- Patent Title: Semiconductor device including magneto-resistive device
- Patent Title (中): 半导体装置包括磁阻装置
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Application No.: US14795882Application Date: 2015-07-09
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Publication No.: US09583534B2Publication Date: 2017-02-28
- Inventor: Choong-jae Lee , Hong-kook Min , Bo-young Seo , Aliaksei Ivaniukovich , Yong-kyu Lee
- Applicant: Choong-jae Lee , Hong-kook Min , Bo-young Seo , Aliaksei Ivaniukovich , Yong-kyu Lee
- Applicant Address: KR
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR
- Agency: Renaissance IP Law Group LLP
- Priority: KR10-2014-0150622 20141031
- Main IPC: H01L27/22
- IPC: H01L27/22 ; H01L43/02 ; H01L43/08 ; H01L29/10 ; H01L29/78

Abstract:
A semiconductor device comprises a magneto-resistive device capable of performing multiple functions with low power. The semiconductor device comprises a cell transistor in which a first impurity region and a second impurity region are respectively arranged on both sides of a channel region in a channel direction, a source line connected to the first impurity region of the cell transistor, and the magneto-resistive device connected to the second impurity region of the cell transistor. The first impurity region and the second impurity region are asymmetrical about a center of the cell transistor in the channel direction with respect to at least one of a shape and an impurity concentration distribution.
Public/Granted literature
- US20160126289A1 SEMICONDUCTOR DEVICE INCLUDING MAGNETO-RESISTIVE DEVICE Public/Granted day:2016-05-05
Information query
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