Invention Grant
- Patent Title: Semiconductor structure and manufacturing method thereof
- Patent Title (中): 半导体结构及其制造方法
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Application No.: US14612300Application Date: 2015-02-03
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Publication No.: US09583568B2Publication Date: 2017-02-28
- Inventor: En-Chiuan Liou , Ssu-I Fu , Chia-Lin Lu , Shih-Hung Tsai , Chih-Wei Yang , Chia-Ching Lin , Chia-Hsun Tseng , Rai-Min Huang
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu; Scott Margo
- Priority: CN201510008807 20150108
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L21/84 ; H01L27/06 ; H01L29/78 ; H01L29/06 ; H01L21/762 ; H01L27/12 ; H01L21/76
Abstract:
The present invention provides a semiconductor structure, including a substrate, a shallow trench isolation (STI) disposed in the substrate, a plurality of first fin structures disposed in the substrate, where each first fin structure and the substrate have same material, and a plurality of second fin structures disposed in the STI, where each second fin structure and the STI have same material.
Public/Granted literature
- US20160204197A1 SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF Public/Granted day:2016-07-14
Information query
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