发明授权
- 专利标题： Methods of manufacturing semiconductor devices
- 专利标题（中）： 制造半导体器件的方法
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申请号： US14697266申请日： 2015-04-27
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公开(公告)号： US09583592B2公开(公告)日： 2017-02-28
- 发明人: Pan-Kwi Park , Dong-Suk Shin , Seok-Jun Won , Weon-Hong Kim , Jae-Gon Lee
- 申请人： Pan-Kwi Park , Dong-Suk Shin , Seok-Jun Won , Weon-Hong Kim , Jae-Gon Lee
- 申请人地址： KR Suwon-si, Gyeonggi-do
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KR Suwon-si, Gyeonggi-do
- 代理机构： Volentine & Whitt, PLLC
- 优先权： KR10-2014-0099738 20140804
- 主分类号： H01L29/66
- IPC分类号： H01L29/66 ; H01L21/02 ; H01L21/311 ; H01L21/3213 ; H01L21/8238 ; H01L21/8234
摘要：
In a method of manufacturing a semiconductor device, a dummy gate structure is formed on a substrate. A first spacer layer is formed on the substrate to cover the dummy gate structure. A nitridation process is performed on the first spacer layer. An upper portion of the substrate adjacent to the dummy gate structure is removed to form a trench. An inner wall of the trench is cleaned. An epitaxial layer is formed to fill the trench. The dummy gate structure is replaced with a gate structure.
公开/授权文献
- US20160035861A1 METHODS OF MANUFACTURING SEMICONDUCTOR DEVICES 公开/授权日：2016-02-04
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