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    Method of Forming Metal Oxide and Apparatus for Performing the Same
    2.
    发明申请
    Method of Forming Metal Oxide and Apparatus for Performing the Same 审中-公开
    形成金属氧化物的方法及其执行装置

    公开(公告)号：US20100170441A1

    公开(公告)日：2010-07-08

    申请号：US12729973

    申请日：2010-03-23

    申请人： Seok-Jun Won ,  Yong-Min Yoo ,  Min-Woo Song ,  Dae-Youn Kim ,  Young-Hoon Kim ,  Weon-Hong Kim ,  Jung-Min Park ,  Sun-Mi Song

    发明人： Seok-Jun Won ,  Yong-Min Yoo ,  Min-Woo Song ,  Dae-Youn Kim ,  Young-Hoon Kim ,  Weon-Hong Kim ,  Jung-Min Park ,  Sun-Mi Song

    IPC分类号： H01L21/46

    CPC分类号： C01G25/02 ,  C01G23/047 ,  C01G27/02 ,  C01G35/00 ,  C01P2006/40

    摘要： In a method and an apparatus for forming metal oxide on a substrate, a source gas including metal precursor flows along a surface of the substrate to form a metal precursor layer on the substrate. An oxidizing gas including ozone flows along a surface of the metal precursor layer to oxidize the metal precursor layer so that the metal oxide is formed on the substrate. A radio frequency power is applied to the oxidizing gas flowing along the surface of the metal precursor layer to accelerate a reaction between the metal precursor layer and the oxidizing gas. Acceleration of the oxidation reaction may improve electrical characteristics and uniformity of the metal oxide.

    摘要翻译： 在基板上形成金属氧化物的方法和装置中，包括金属前体的源气体沿着基板的表面流动，以在基板上形成金属前体层。 包括臭氧的氧化气体沿着金属前体层的表面流动，以氧化金属前体层，从而在基板上形成金属氧化物。 对沿着金属前体层的表面流动的氧化气体施加射频功率，以加速金属前体层与氧化气体的反应。 氧化反应的加速可以改善金属氧化物的电特性和均匀性。

    Logic device having vertically extending metal-insulator-metal capacitor between interconnect layers and method of fabricating the same
    3.
    发明授权
    Logic device having vertically extending metal-insulator-metal capacitor between interconnect layers and method of fabricating the same 有权
    在互连层之间具有垂直延伸的金属 - 绝缘体 - 金属电容器的逻辑器件及其制造方法

    公开(公告)号：US07476922B2

    公开(公告)日：2009-01-13

    申请号：US10969098

    申请日：2004-10-20

    申请人： Seok-Jun Won ,  Yong-Kuk Jeong ,  Dae-Jin Kwon ,  Min-Woo Song ,  Weon-Hong Kim

    发明人： Seok-Jun Won ,  Yong-Kuk Jeong ,  Dae-Jin Kwon ,  Min-Woo Song ,  Weon-Hong Kim

    IPC分类号： H01L27/108 ,  H01L29/94

    CPC分类号： H01L28/91 ,  H01L21/76807 ,  H01L21/76838 ,  H01L27/0805

    摘要： A logic device having a vertically extending MIM capacitor between interconnect layers includes a semiconductor substrate. A lower interconnect layer is located over the semiconductor substrate, and an upper interconnect layer is located over the lower interconnect layer. A U-shaped lower metal plate is interposed between the lower interconnect layer and the upper interconnect layer. The U-shaped lower metal plate directly contacts the lower interconnect layer. The capacitor dielectric layer covers the inner surface of the lower metal plate. Further, the capacitor dielectric layer has an extension portion interposed between the brim of the lower metal plate and the upper interconnect layer. An upper metal plate covers the inner surface of the capacitor dielectric layer. The upper metal plate is in contact with the upper interconnect layer and is confined by the capacitor dielectric layer.

    摘要翻译： 在互连层之间具有垂直延伸的MIM电容器的逻辑器件包括半导体衬底。 下部互连层位于半导体衬底上方，并且上互连层位于下互连层上。 U形下金属板插入在下互连层和上互连层之间。 U形下金属板直接接触下互连层。 电容器电介质层覆盖下金属板的内表面。 此外，电容器介电层具有插入在下金属板的边缘和上互连层之间的延伸部分。 上金属板覆盖电容器介电层的内表面。 上金属板与上互连层接触并被电容器电介质层约束。

    Method of forming thin film for improved productivity
    4.
    发明授权
    Method of forming thin film for improved productivity 有权
    形成薄膜以提高生产率的方法

    公开(公告)号：US07232492B2

    公开(公告)日：2007-06-19

    申请号：US11007884

    申请日：2004-12-09

    申请人： Seok-Jun Won ,  Weon-Hong Kim ,  Dae-Jin Kwon

    发明人： Seok-Jun Won ,  Weon-Hong Kim ,  Dae-Jin Kwon

    IPC分类号： B08B3/12 ,  B08B6/00 ,  B08B7/00

    CPC分类号： C23C16/4404 ,  C23C16/4405 ,  H01L21/3141 ,  H01L21/31637

    摘要： There is provided a method of forming a thin film for providing improved fabrication productivity. The method includes introducing a semiconductor substrate into a process chamber. A process thin film is formed on the semiconductor substrate, in which a chamber coating layer is formed on inner walls of the process chamber while the process thin film is formed. The semiconductor substrate is removed from the process chamber. A stress relief layer is formed on the chamber coating layer. After all of the above operations are repeatedly performed at least one time, an in-situ cleaning is performed on the chamber coating layer and the stress relief layer, which are alternately formed in stack on the inner walls of the process chamber.

    摘要翻译： 提供了形成薄膜以提高制造生产率的方法。 该方法包括将半导体衬底引入到处理室中。 在半导体衬底上形成工艺薄膜，其中在形成工艺薄膜的同时，在处理室的内壁上形成腔室涂层。 将半导体衬底从处理室中取出。 在室涂层上形成应力消除层。 在上述操作全部反复进行至少一次之后，对处理室内壁交替形成的室涂层和应力消除层进行原位清洗。

    MEMS tunable capacitor with a wide tuning range and method of fabricating the same
    5.
    发明授权
    MEMS tunable capacitor with a wide tuning range and method of fabricating the same 有权
    具有宽调谐范围的MEMS可调电容器及其制造方法

    公开(公告)号：US07042698B2

    公开(公告)日：2006-05-09

    申请号：US11047762

    申请日：2005-02-02

    申请人： Seok-Jun Won ,  Kang-soo Chu ,  Weon-Hong Kim

    发明人： Seok-Jun Won ,  Kang-soo Chu ,  Weon-Hong Kim

    IPC分类号： H01G5/00

    CPC分类号： H01G5/0136 ,  H01G5/14 ,  H01G5/145 ,  H01G5/18

    摘要： A MEMS tunable capacitor and method of fabricating the same, includes a plurality of fixed charge plates on a substrate, the plurality of fixed charge plates having a same height, being arranged in a shape of comb-teeth and being electrically connected to one another, a capacitor dielectric layer covering the plurality of fixed charge plates, a movable charge plate structure spaced apart from the capacitor dielectric layer, and arranged on the plurality of fixed charge plates, wherein the movable charge plate structure includes a plurality of movable charge plates arranged corresponding the plurality of fixed charge plates, and an actuator connected to the movable charge plate structure allowing the movable charge plate structure to move in a horizontal direction.

    摘要翻译： MEMS可调谐电容器及其制造方法包括在基板上的多个固定的充电板，多个具有相同高度的固定充电板被布置成梳齿形并彼此电连接， 覆盖所述多个固定充电板的电容器电介质层，与所述电容器介电层间隔开并且布置在所述多个固定的充电板上的可移动的充电板结构，其中所述可移动的充电板结构包括多个相应地布置的可移动的充电板 多个固定的充电板和连接到可移动的充电板结构的致动器，其允许可移动的充电板结构在水平方向上移动。

    Capacitor unit and method of forming the same
    6.
    发明授权
    Capacitor unit and method of forming the same 有权
    电容器单元及其形成方法

    公开(公告)号：US07855431B2

    公开(公告)日：2010-12-21

    申请号：US12106830

    申请日：2008-04-21

    申请人： Jung-Min Park ,  Seok-Jun Won ,  Min-Woo Song ,  Weon-Hong Kim

    发明人： Jung-Min Park ,  Seok-Jun Won ,  Min-Woo Song ,  Weon-Hong Kim

    IPC分类号： H01L21/02

    CPC分类号： H01L28/65 ,  H01G4/33 ,  H01G4/38 ,  Y10S438/957

    摘要： A capacitor unit includes a first capacitor and a second capacitor. The first capacitor includes a first lower electrode, a first dielectric layer pattern and a first upper electrode sequentially stacked. The first capacitor includes a first control layer pattern for controlling a voltage coefficient of capacitance (VCC) of the first capacitor between the first lower electrode and the first dielectric layer pattern. The second capacitor includes a second lower electrode, a second dielectric layer pattern and a second upper electrode sequentially stacked. The second lower electrode is electrically connected to the first upper electrode, and the second upper electrode is electrically connected to the second lower electrode. The second capacitor includes a second control layer pattern for controlling a VCC of the second capacitor between the second lower electrode and the second dielectric layer pattern.

    摘要翻译： 电容器单元包括第一电容器和第二电容器。 第一电容器包括第一下电极，第一电介质层图案和顺序层叠的第一上电极。 第一电容器包括用于控制第一电容器和第一电介质层图案之间的第一电容器的电容电压（VCC）的电压系数的第一控制层图案。 第二电容器包括顺序层叠的第二下电极，第二电介质层图案和第二上电极。 第二下部电极与第一上部电极电连接，第二上部电极与第二下部电极电连接。 第二电容器包括用于在第二下电极和第二电介质层图案之间控制第二电容器的VCC的第二控制层图案。

    Plasma processing apparatus and method of using the same
    8.
    发明申请
    Plasma processing apparatus and method of using the same 审中-公开
    等离子体处理装置及其使用方法

    公开(公告)号：US20070186857A1

    公开(公告)日：2007-08-16

    申请号：US11700785

    申请日：2007-02-01

    申请人： Ju-Youn Kim ,  Seok-Jun Won ,  Weon-Hong Kim

    发明人： Ju-Youn Kim ,  Seok-Jun Won ,  Weon-Hong Kim

    IPC分类号： B08B6/00 ,  C23C16/00

    CPC分类号： C23C16/4405 ,  C23C16/45591

    摘要： Example embodiments relate to an apparatus and method for manufacturing a semiconductor device. Other example embodiments relate to a plasma processing apparatus having an in-situ cleaning function and a method of using the same. The plasma processing apparatus may include an outer chamber, an inner chamber installed in the outer chamber, a gas supply unit for supplying a process gas or a cleaning gas into the inner chamber, an electrode positioned in the inner chamber, an electrode plasma power supply for applying power to the electrode, a first flexible member connecting the inner chamber and the outer chamber and having a first connector therein electrically connected to the inner chamber and/or a first chamber plasma power supply connected to the first connector and applying power to the inner chamber through the first connector.

    摘要翻译： 示例实施例涉及用于制造半导体器件的装置和方法。 其他示例性实施例涉及具有原位清洁功能的等离子体处理设备及其使用方法。 等离子体处理装置可以包括外室，安装在外室的内室，用于向内室供给处理气体或清洁气体的气体供给单元，位于内室的电极，电极等离子体电源 用于向所述电极施加电力;第一柔性构件，其连接所述内室和所述外室，并且具有电连接到所述内室的第一连接器和/或连接到所述第一连接器的第一室等离子体电源， 内室通过第一连接器。

    METHODS OF FORMING METAL LAYERS USING METAL-ORGANIC CHEMICAL VAPOR DEPOSITION
    9.
    发明申请
    METHODS OF FORMING METAL LAYERS USING METAL-ORGANIC CHEMICAL VAPOR DEPOSITION 审中-公开
    使用金属有机化学气相沉积法形成金属层的方法

    公开(公告)号：US20070178249A1

    公开(公告)日：2007-08-02

    申请号：US11623815

    申请日：2007-01-17

    申请人： Min-Woo Song ,  Seok-Jun Won ,  Dae-Jin Kwon ,  Weon-Hong Kim ,  Ju-Youn Kim ,  Jung-Min Park

    发明人： Min-Woo Song ,  Seok-Jun Won ,  Dae-Jin Kwon ,  Weon-Hong Kim ,  Ju-Youn Kim ,  Jung-Min Park

    IPC分类号： H05H1/24

    CPC分类号： C23C16/34 ,  C23C16/56

    摘要： Provided is a method of forming a metal layer using metal-organic chemical vapor deposition (MOCVD). The method includes using MOCVD to form on a dielectric layer a metal layer having a first thickness, performing a first plasma process on the metal layer, using the MOCVD process to form a metal layer having a second thickness on the metal layer having the first thickness and performing a second plasma process on the metal layer having the second thickness, wherein the second plasma process has an energy level greater than the energy level of the first plasma process.

    摘要翻译： 提供了使用金属有机化学气相沉积（MOCVD）形成金属层的方法。 该方法包括使用MOCVD在电介质层上形成具有第一厚度的金属层，在金属层上执行第一等离子体处理，使用MOCVD工艺在具有第一厚度的金属层上形成具有第二厚度的金属层 以及对具有所述第二厚度的所述金属层执行第二等离子体处理，其中所述第二等离子体工艺具有大于所述第一等离子体工艺的能级的能级。