Invention Grant
- Patent Title: Drain extended CMOS with counter-doped drain extension
- Patent Title (中): 漏极扩展扩展CMOS
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Application No.: US14949241Application Date: 2015-11-23
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Publication No.: US09583596B2Publication Date: 2017-02-28
- Inventor: Philipp Steinmann , Amitava Chatterjee , Sameer Pendharkar
- Applicant: Texas Instruments Incorporated
- Applicant Address: US TX Dallas
- Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee: TEXAS INSTRUMENTS INCORPORATED
- Current Assignee Address: US TX Dallas
- Agent Jacqueline J. Garner; Charles A. Brill; Frank D. Cimino
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L29/66 ; H01L29/161 ; H01L29/167 ; H01L29/78 ; H01L29/861 ; H01L29/08 ; G06F17/50 ; H01L29/10
Abstract:
An integrated circuit containing a diode with a drift region containing a first dopant type plus scattering centers. An integrated circuit containing a DEMOS transistor with a drift region containing a first dopant type plus scattering centers. A method for designing an integrated circuit containing a DEMOS transistor with a counter doped drift region.
Public/Granted literature
- US20160079392A1 Drain Extended CMOS with Counter-Doped Drain Extension Public/Granted day:2016-03-17
Information query
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