Invention Grant
US09583633B2 Oxide for semiconductor layer of thin film transistor, thin film transistor and display device
有权
氧化物半导体层薄膜晶体管，薄膜晶体管及显示器件
- Patent Title: Oxide for semiconductor layer of thin film transistor, thin film transistor and display device
- Patent Title (中): 氧化物半导体层薄膜晶体管，薄膜晶体管及显示器件
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Application No.: US14392369Application Date: 2014-02-27
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Publication No.: US09583633B2Publication Date: 2017-02-28
- Inventor: Byung Du Ahn , Gun Hee Kim , Yeon-Hong Kim , Jin Hyun Park , Shuji Kosaka , Kazushi Hayashi
- Applicant: SAMSUNG DISPLAY CO., LTD.
- Applicant Address: KR Yongin-si, Gyeonggi-Do
- Assignee: SAMSUNG DISPLAY CO., LTD.
- Current Assignee: SAMSUNG DISPLAY CO., LTD.
- Current Assignee Address: KR Yongin-si, Gyeonggi-Do
- Agency: F. Chau & Associates, LLC
- Priority: JP2013-047347 20130308
- International Application: PCT/JP2014/054958 WO 20140227
- International Announcement: WO2014/136659 WO 20140912
- Main IPC: H01L29/10
- IPC: H01L29/10 ; H01L21/00 ; H01L29/786 ; H01L29/66 ; H01L27/12 ; H01L21/02
Abstract:
In an oxide for a semiconductor layer of a thin film transistor according to the present invention, wherein metal elements constituting the oxide are In, Zn, and Sn, an oxygen partial pressure is 15% by volume or more when depositing the oxide in the semiconductor layer of the thin film transistor, and a defect density of the oxide satisfies 7.5×1015cm−3 or less, and a mobility satisfies 15 cm2/Vs or more.
Public/Granted literature
- US20160211384A1 OXIDE FOR SEMICONDUCTOR LAYER OF THIN FILM TRANSISTOR, THIN FILM TRANSISTOR AND DISPLAY DEVICE Public/Granted day:2016-07-21
Information query
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