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    Display device and method of driving the same
    2.
    发明授权
    Display device and method of driving the same 有权
    显示装置及其驱动方法

    公开(公告)号：US09548034B2

    公开(公告)日：2017-01-17

    申请号：US14715490

    申请日：2015-05-18

    申请人： SAMSUNG DISPLAY CO., LTD.

    发明人： Ji Hun Lim ,  Hyun Jae Na ,  Dong Hwan Shim ,  Byung Du Ahn

    IPC分类号： G09G3/36 ,  H01L31/0224

    CPC分类号： G09G3/3648 ,  G09G2330/021 ,  G09G2360/144 ,  H01L31/022466

    摘要： A display device includes a first pixel coupled to a first scan line and a first data line. The first pixel includes a switching transistor including a control terminal connected to the first scan line and an input terminal connected to the first data line, and is turned on by an on-scan signal, a first transistor including a first control terminal connected to the first scan line, a first input terminal connected to the first data line, and a first output terminal connected to the first control terminal; and a second transistor including a second control terminal connected to the first output terminal, a second input terminal receiving a base voltage, and a second output terminal connected to the second control terminal. The first and second transistors respectively convert light into first and second currents outputted respectively to the first and second output terminals in response to an off-scan signal.

    摘要翻译： 显示装置包括耦合到第一扫描线和第一数据线的第一像素。 第一像素包括开关晶体管，其包括连接到第一扫描线的控制端子和连接到第一数据线的输入端子，并由接通扫描信号导通;第一晶体管，包括连接到第一扫描线的第一控制端子 第一扫描线，连接到第一数据线的第一输入端和连接到第一控制端的第一输出端; 以及第二晶体管，包括连接到第一输出端子的第二控制端子，接收基极电压的第二输入端子和连接到第二控制端子的第二输出端子。 第一和第二晶体管响应于截止扫描信号分别将光转换成分别输出到第一和第二输出端的第一和第二电流。

    THIN FILM TRANSISTOR
    7.
    发明申请
    THIN FILM TRANSISTOR 有权
    薄膜晶体管

    公开(公告)号：US20150249159A1

    公开(公告)日：2015-09-03

    申请号：US14436241

    申请日：2013-10-15

    申请人： KABUSHIKI KAISHA KOBE SEIKO SHO (KOBE STEEL, LTD.) ,  Samsung Display Co., Ltd.

    发明人： Hiroaki Tao ,  Takeaki Maeda ,  Aya Miki ,  Toshihiro Kugimiya ,  Byung Du Ahn ,  So Young Koo ,  Gun Hee Kim

    IPC分类号： H01L29/786

    CPC分类号： H01L29/78606 ,  H01L29/7869 ,  H01L29/78693

    摘要： Provided is a thin film transistor wherein the shape of a protrusion formed on the interface between an oxide semiconductor layer and a protection film is suitably controlled, and stable characteristics are achieved. This thin film transistor is characterized in that: the thin film transistor has an oxide semiconductor layer formed of an oxide containing at least In, Zn and Sn as metal elements, and a protection film directly in contact with the oxide semiconductor layer; and the maximum height of a protrusion formed on the oxide semiconductor layer surface directly in contact with the protection film is less than 5 nm.

    摘要翻译： 提供一种薄膜晶体管，其中形成在氧化物半导体层和保护膜之间的界面上的突起的形状被适当地控制，并且实现了稳定的特性。 该薄膜晶体管的特征在于：薄膜晶体管具有由至少含有In，Zn和Sn作为金属元素的氧化物和与氧化物半导体层直接接触的保护膜形成的氧化物半导体层; 在与保护膜直接接触的氧化物半导体层表面上形成的突起的最大高度小于5nm。

    Display device and method of manufacturing the same
    8.
    发明授权
    Display device and method of manufacturing the same 有权
    显示装置及其制造方法

    公开(公告)号：US08912027B2

    公开(公告)日：2014-12-16

    申请号：US13733820

    申请日：2013-01-03

    申请人： Samsung Display Co., Ltd.

    发明人： Byung Du Ahn ,  Kyoung Won Lee ,  Gun Hee Kim ,  Young Joo Choi

    IPC分类号： H01L33/44 ,  H01L29/786 ,  H01L27/12

    CPC分类号： H01L33/44 ,  H01L27/1225 ,  H01L29/7869

    摘要： A display device according to an exemplary embodiment of the present invention includes a semiconductor layer; a data line disposed on the semiconductor layer, and a source electrode as well as a drain electrode disposed on the semiconductor layer and facing the source electrode. The semiconductor layer is made of an oxide semiconductor including indium, tin, and zinc. An atomic percent of indium in the oxide semiconductor is equal to or larger than about 10 at % and equal to or smaller than about 90 at %, an atomic percent of zinc in the oxide semiconductor is equal to or larger than about 5 at % and equal to or smaller than about 60 at %, and an atomic percent of tin in the oxide semiconductor is equal to or larger than about 5 at % and equal to or smaller than about 45 at %, and the data line and the drain electrode comprise copper.

    摘要翻译： 根据本发明的示例性实施例的显示装置包括半导体层; 设置在半导体层上的数据线，以及设置在半导体层上并面向源电极的源电极以及漏电极。 半导体层由包括铟，锡和锌的氧化物半导体制成。 氧化物半导体中的铟的原子百分比等于或大于约10原子％且等于或小于约90原子％，氧化物半导体中的锌的原子百分比等于或大于约5原子％，以及 等于或小于约60at％，并且氧化物半导体中的锡的原子百分比等于或大于约5at％且等于或小于约45at％，并且数据线和漏电极包括 铜。

    Display device
    10.
    发明授权
    Display device 有权

    公开(公告)号：US10229964B2

    公开(公告)日：2019-03-12

    申请号：US15832628

    申请日：2017-12-05

    申请人： Samsung Display Co., Ltd.

    发明人： Keon Woo Kim ,  Ji Hyun Ka ,  Tae Hoon Kwon ,  Ho Kyoon Kwon ,  Min Ku Lee ,  Zail Lhee ,  Jin Tae Jeong ,  Seung Ji Cha ,  Byung Du Ahn ,  Jeong Ho Lee

    IPC分类号： H01L27/32 ,  H01L51/00 ,  G09G3/3233 ,  H01L27/12

    摘要： A display device includes a substrate including a first pixel region, a second pixel region having an area smaller than that of the first pixel region, and a peripheral region surrounding the first pixel region and the second pixel region, a second pixel provided in the second pixel region, a second line connected to the second pixel, an extension line extended to the peripheral region, a dummy part located in the peripheral region to overlap with the extension line, a power line connected to the first and second pixel regions, and a connection line located in the peripheral region to be connected to the dummy part, the connection line being electrically connected to a portion of the second pixel region, wherein the second pixel region includes a first sub-pixel region connected to the connection line and a second sub-pixel region except the first sub-pixel region.