Invention Grant
- Patent Title: Solar cell and fabrication method thereof
- Patent Title (中): 太阳能电池及其制造方法
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Application No.: US14490338Application Date: 2014-09-18
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Publication No.: US09583653B2Publication Date: 2017-02-28
- Inventor: Hyun Jung Park , Jin Ho Kim
- Applicant: LG ELECTRONICS INC.
- Applicant Address: KR Seoul
- Assignee: LG ELECTRONICS INC.
- Current Assignee: LG ELECTRONICS INC.
- Current Assignee Address: KR Seoul
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Priority: KR10-2009-0057155 20090625
- Main IPC: H01L31/028
- IPC: H01L31/028 ; H01L31/0216 ; H01L31/0232 ; H01L31/0224 ; H01L31/068 ; H01L31/18 ; H01L31/0236

Abstract:
A fabrication method of a solar cell, the method includes doping a silicon substrate having a first conductive type impurity with a second conductive type impurity, the second conductive type impurity being opposite to the first conductive type impurity, and thereby forming an emitter layer at a front surface part of the silicon substrate, forming an antireflection film on the emitter layer, forming a front electrode on the antireflection film, forming a rear electrode on a rear surface of the silicon substrate, and forming a back surface field layer at a rear surface part of the silicon substrate, the back surface field layer having a concentration of the first conductive type impurity that is higher than that of the silicon substrate, the back surface field layer having a different concentration of the second conductive type impurity from that of the emitter layer.
Public/Granted literature
- US20150004742A1 SOLAR CELL AND FABRICATION METHOD THEREOF Public/Granted day:2015-01-01
Information query
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