Invention Grant
US09589611B2 Memory device, semiconductor device, and electronic device 有权
存储器件,半导体器件和电子器件

Memory device, semiconductor device, and electronic device
Abstract:
A column driver includes an amplifier circuit for amplifying data of a read bit line and a latch circuit for retaining the amplified data. The latch circuit includes a pair of nodes Q and QB for retaining complementary data. Data is read from a memory cell in each write target row to a read bit line, and amplified by the amplifier circuit. The amplified data is written to the node Q (or QB) of the latch circuit. In a write target column, write data is input to the latch circuit through the node Q (or QB) to update data of the latch circuit. Then, in each column, data of the latch circuit is written to a write bit line, and the data of the write bit line is written to the memory cell.
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