Invention Grant
- Patent Title: Memory device, semiconductor device, and electronic device
- Patent Title (中): 存储器件,半导体器件和电子器件
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Application No.: US15083776Application Date: 2016-03-29
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Publication No.: US09589611B2Publication Date: 2017-03-07
- Inventor: Takahiko Ishizu , Shuhei Nagatsuka
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office
- Agent Eric J. Robinson
- Priority: JP2015-074828 20150401
- Main IPC: G11C11/40
- IPC: G11C11/40 ; G11C7/12 ; H01L27/105 ; H01L27/12 ; H01L27/092 ; H01L29/786 ; G11C5/06 ; G11C7/06

Abstract:
A column driver includes an amplifier circuit for amplifying data of a read bit line and a latch circuit for retaining the amplified data. The latch circuit includes a pair of nodes Q and QB for retaining complementary data. Data is read from a memory cell in each write target row to a read bit line, and amplified by the amplifier circuit. The amplified data is written to the node Q (or QB) of the latch circuit. In a write target column, write data is input to the latch circuit through the node Q (or QB) to update data of the latch circuit. Then, in each column, data of the latch circuit is written to a write bit line, and the data of the write bit line is written to the memory cell.
Public/Granted literature
- US20160293232A1 MEMORY DEVICE, SEMICONDUCTOR DEVICE, AND ELECTRONIC DEVICE Public/Granted day:2016-10-06
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