Invention Grant
- Patent Title: Method of writing to a spin torque magnetic random access memory
- Patent Title (中): 写入自旋转矩磁随机存取存储器的方法
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Application No.: US15057761Application Date: 2016-03-01
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Publication No.: US09589622B2Publication Date: 2017-03-07
- Inventor: Michael Schneider , Dimitri Houssameddine , Jon Slaughter
- Applicant: Everspin Technologies, Inc.
- Applicant Address: US AZ Chandler
- Assignee: Everspin Technologies, Inc.
- Current Assignee: Everspin Technologies, Inc.
- Current Assignee Address: US AZ Chandler
- Main IPC: G11C11/00
- IPC: G11C11/00 ; G11C11/16

Abstract:
Circuitry and methods provide an increased tunnel barrier endurance (lifetime) previously shortened by dielectric breakdown by providing a charging pulses of opposite polarity in comparison with write pulses. The charging pulse of opposite polarity may comprise equal or different width and amplitude than that of the write pulse, may be applied with each write pulse or a series of write pulses, and may be applied prior to or subsequent to the write pulse. A register is also used to keep track of the read pulse polarity such that read pulses of alternating polarity can be used in reading operations.
Public/Granted literature
- US20160180911A1 METHOD OF WRITING TO A SPIN TORQUE MAGNETIC RANDOM ACCESS MEMORY Public/Granted day:2016-06-23
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