Invention Grant
US09590040B2 Methods of forming fins for a FinFET device by forming and replacing sacrificial fin structures with alternative materials
有权
通过用替代材料形成和替换牺牲翅片结构来形成FinFET器件的翅片的方法
- Patent Title: Methods of forming fins for a FinFET device by forming and replacing sacrificial fin structures with alternative materials
- Patent Title (中): 通过用替代材料形成和替换牺牲翅片结构来形成FinFET器件的翅片的方法
-
Application No.: US14341000Application Date: 2014-07-25
-
Publication No.: US09590040B2Publication Date: 2017-03-07
- Inventor: Murat Kerem Akarvardar , Ajey Poovannummoottil Jacob
- Applicant: GLOBALFOUNDRIES Inc.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee: GLOBALFOUNDRIES Inc.
- Current Assignee Address: KY Grand Cayman
- Agency: Amerson Law Firm, PLLC
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/08 ; H01L21/84 ; H01L29/10 ; H01L29/66
Abstract:
One illustrative method disclosed herein includes, among other things, forming a sacrificial fin structure above a semiconductor substrate, forming a layer of insulating material around the sacrificial fin structure, removing the sacrificial fin structure so as to define a replacement fin cavity in the layer of insulating material that exposes an upper surface of the substrate, forming a replacement fin in the replacement fin cavity on the exposed upper surface of the substrate, recessing the layer of insulating material, and forming a gate structure around at least a portion of the replacement fin exposed above the recessed layer of insulating material.
Public/Granted literature
Information query
IPC分类:
