Invention Grant
US09590103B2 Semiconductor devices having multiple gate structures and methods of manufacturing such devices
有权
具有多个栅极结构的半导体器件和制造这种器件的方法
- Patent Title: Semiconductor devices having multiple gate structures and methods of manufacturing such devices
- Patent Title (中): 具有多个栅极结构的半导体器件和制造这种器件的方法
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Application No.: US14990863Application Date: 2016-01-08
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Publication No.: US09590103B2Publication Date: 2017-03-07
- Inventor: Yoon Hae Kim , Jin Wook Lee , Jong Ki Jung , Myung II Kang , Kwang Yong Yang , Kwan Heum Lee , Byeong Chan Lee
- Applicant: Yoon Hae Kim , Jin Wook Lee , Jong Ki Jung , Myung II Kang , Kwang Yong Yang , Kwan Heum Lee , Byeong Chan Lee
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Myers Bigel, P.A.
- Priority: KR10-2015-0071011 20150521
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/165 ; H01L27/088 ; H01L29/08
Abstract:
A semiconductor device includes a substrate having a first region and a second region, a plurality of first gate structures in the first region, the first gate structures being spaced apart from each other by a first distance, a plurality of second gate structures in the second region, the second gate structures being spaced apart from each other by a second distance, a first spacer on sidewalls of the first gate structures, a dielectric layer on the first spacer, a second spacer on sidewalls of the second gate structures, and a third spacer on the second spacer.
Public/Granted literature
- US20160343858A1 SEMICONDUCTOR DEVICES HAVING MULTIPLE GATE STRUCTURES AND METHODS OF MANUFACTURING SUCH DEVICES Public/Granted day:2016-11-24
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