Invention Grant
US09590151B2 Method for producing a plurality of radiation-emitting semiconductor chips
有权
用于制造多个辐射发射半导体芯片的方法
- Patent Title: Method for producing a plurality of radiation-emitting semiconductor chips
- Patent Title (中): 用于制造多个辐射发射半导体芯片的方法
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Application No.: US14785620Application Date: 2014-04-14
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Publication No.: US09590151B2Publication Date: 2017-03-07
- Inventor: Markus Richter , Alexander Baumgartner , Hans-Christoph Gallmeier , Tony Albrecht
- Applicant: OSRAM Opto Semiconductors GmbH
- Applicant Address: DE Regensburg
- Assignee: OSRAM OPTO SEMICONDUCTORS GMBH
- Current Assignee: OSRAM OPTO SEMICONDUCTORS GMBH
- Current Assignee Address: DE Regensburg
- Agency: McDermott Will & Emery LLP
- Priority: DE102013103983 20130419
- International Application: PCT/EP2014/057528 WO 20140414
- International Announcement: WO2014/170271 WO 20141023
- Main IPC: H01L33/50
- IPC: H01L33/50 ; H01L33/00 ; H01L33/54 ; H01L33/56 ; H01L33/60

Abstract:
A method is provided for producing a plurality of radiation-emitting semiconductor chips, having the following steps: providing a plurality of semiconductor bodies (1) which are suitable for emitting electromagnetic radiation from a radiation exit face (3), applying the semiconductor bodies (1) to a carrier (2), applying a first mask layer (4) to regions of the carrier (2) between the semiconductor bodies (1), applying a conversion layer (5) to the entire surface of the semiconductor bodies (1) and the first mask layer (4) using a spray coating method, and removing the first mask layer (4), such that in each case a conversion layer (5) arises on the radiation exit faces (3) of the semiconductor bodies (1).
Public/Granted literature
- US20160079489A1 METHOD FOR PRODUCING A PLURALITY OF RADIATION-EMITTING SEMICONDUCTOR CHIPS Public/Granted day:2016-03-17
Information query
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