Invention Grant
- Patent Title: Apparatus of detecting transmittance of trench on infrared-transmittable material and method thereof
- Patent Title (中): 探测红外可透射材料沟槽透光率的装置及其方法
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Application No.: US14824187Application Date: 2015-08-12
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Publication No.: US09594021B2Publication Date: 2017-03-14
- Inventor: Chun-Fu Lin , Chun-Li Chang , Tai-Shan Liao , Hung-Ji Huang , Chi-Hung Huang
- Applicant: National Applied Research Laboratories
- Applicant Address: TW Taipei
- Assignee: NATIONAL APPLIED RESEARCH LABORATORIES
- Current Assignee: NATIONAL APPLIED RESEARCH LABORATORIES
- Current Assignee Address: TW Taipei
- Agency: Jackson IPG PLLC
- Agent Demian K. Jackson
- Main IPC: G01N21/00
- IPC: G01N21/00 ; G01N21/86 ; G01N21/88 ; G01N21/59

Abstract:
An apparatus is provided for detecting transmittance of a trench. The trench is located on an infrared-transmittable material, which can be a wafer. The wafer is obtained after a ditching process. An image of the wafer is fetched. The contrast of the image is greatly enhanced. The contrast-enhanced image is used for automated analysis of the transmittance of the trench. Accuracy of detecting the transmittance is improved. Hence, the present invention uses a simple structure to detect transmittance defects of the trench for ensuring goodness of the wafer.
Public/Granted literature
- US20170045448A1 Apparatus of Detecting Transmittance of Trench on Infrared-Transmittable Material and Method Thereof Public/Granted day:2017-02-16
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