Abstract:
An apparatus is provided for detecting transmittance of a trench. The trench is located on an infrared-transmittable material, which can be a wafer. The wafer is obtained after a ditching process. An image of the wafer is fetched. The contrast of the image is greatly enhanced. The contrast-enhanced image is used for automated analysis of the transmittance of the trench. Accuracy of detecting the transmittance is improved. Hence, the present invention uses a simple structure to detect transmittance defects of the trench for ensuring goodness of the wafer.
Abstract:
A multi-band spectrum division device is provided, comprising: a first parabolic reflection mirror, planar multi-mirrors, an optical grating and a second parabolic mirror. The first parabolic mirror is configured to reduce the divergent angle of incident optical beam, and to generate a collimated optical beam. The planar multi-mirrors are configured to adjust the incident angles of collimated beam on the grating surface. The grating is configured to disperse the incident signals with multi-wavelengths. The second parabolic mirror is configured to focus the multi-wavelength signals on its focal plane. Besides, each of the planar multi-mirrors has different location and angle in this device.
Abstract:
An apparatus is provided for detecting transmittance of a trench. The trench is located on an infrared-transmittable material, which can be a wafer. The wafer is obtained after a ditching process. An image of the wafer is fetched. The contrast of the image is greatly enhanced. The contrast-enhanced image is used for automated analysis of the transmittance of the trench. Accuracy of detecting the transmittance is improved. Hence, the present invention uses a simple structure to detect transmittance defects of the trench for ensuring goodness of the wafer.