Invention Grant
US09595361B2 Thin film structure including metal seed layer and method of forming oxide thin film on transparent conductive substrate by using the metal seed layer
有权
包括金属种子层的薄膜结构和通过使用金属种子层在透明导电基底上形成氧化物薄膜的方法
- Patent Title: Thin film structure including metal seed layer and method of forming oxide thin film on transparent conductive substrate by using the metal seed layer
- Patent Title (中): 包括金属种子层的薄膜结构和通过使用金属种子层在透明导电基底上形成氧化物薄膜的方法
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Application No.: US14337741Application Date: 2014-07-22
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Publication No.: US09595361B2Publication Date: 2017-03-14
- Inventor: Hyeon-jin Shin , Seong-jun Park , Jae-ho Lee , Seong-Jun Jeong
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2014-0000837 20140103
- Main IPC: H01L21/30
- IPC: H01L21/30 ; H01L21/46 ; H01B1/08 ; C23C14/08 ; C23C14/02 ; C23C16/02 ; C23C16/40
Abstract:
A thin film structure includes a metal seed layer, and a method of forming an oxide thin film on a conductive substrate by using the metal seed layer is disclosed. The thin film structure includes a transparent conductive substrate, a metal seed layer that is deposited on the transparent conductive substrate, and a metal oxide layer that is deposited on the metal seed layer.
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