Invention Grant
- Patent Title: Growing graphene on substrates
- Patent Title (中): 在基底上生长石墨烯
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Application No.: US14425578Application Date: 2013-10-24
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Publication No.: US09595436B2Publication Date: 2017-03-14
- Inventor: Cara Beasley , Ralf Hofmann , Majeed A. Foad
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Patterson & Sheridan, LLP
- International Application: PCT/US2013/066501 WO 20131024
- International Announcement: WO2014/066574 WO 20140501
- Main IPC: B05D5/12
- IPC: B05D5/12 ; H01L21/02 ; B05D3/06 ; B05D3/14

Abstract:
Embodiments described herein provide methods and apparatus for forming graphitic carbon such as graphene on a substrate. The method includes providing a precursor comprising a linear conjugated hydrocarbon, depositing a hydrocarbon layer from the precursor on the substrate, and forming graphene from the hydrocarbon layer by applying energy to the substrate. The precursor may include template molecules such as polynuclear aromatics, and may be deposited on the substrate by spinning on, by spraying, by flowing, by dipping, or by condensing. The energy may be applied as radiant energy, thermal energy, or plasma energy.
Public/Granted literature
- US20150235847A1 GROWING GRAPHENE ON SUBSTRATES Public/Granted day:2015-08-20
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