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    Growing graphene on substrates
    1.
    发明授权
    Growing graphene on substrates 有权
    在基底上生长石墨烯

    公开(公告)号：US09595436B2

    公开(公告)日：2017-03-14

    申请号：US14425578

    申请日：2013-10-24

    Applicant: Applied Materials, Inc.

    Inventor： Cara Beasley ,  Ralf Hofmann ,  Majeed A. Foad

    IPC: B05D5/12 ,  H01L21/02 ,  B05D3/06 ,  B05D3/14

    CPC classification number: H01L21/02376 ,  B05D3/061 ,  B05D3/065 ,  B05D3/141 ,  B05D5/12 ,  C01B32/182 ,  C01B32/184 ,  C01B32/186 ,  C01B32/20 ,  H01L21/02318 ,  H01L21/0234 ,  H01L21/02345 ,  H01L21/0237 ,  H01L21/02527 ,  H01L21/02628 ,  H01L21/02664 ,  H01L21/288

    Abstract: Embodiments described herein provide methods and apparatus for forming graphitic carbon such as graphene on a substrate. The method includes providing a precursor comprising a linear conjugated hydrocarbon, depositing a hydrocarbon layer from the precursor on the substrate, and forming graphene from the hydrocarbon layer by applying energy to the substrate. The precursor may include template molecules such as polynuclear aromatics, and may be deposited on the substrate by spinning on, by spraying, by flowing, by dipping, or by condensing. The energy may be applied as radiant energy, thermal energy, or plasma energy.

    Abstract translation: 本文所述的实施方案提供了在基底上形成石墨碳如石墨烯的方法和装置。 该方法包括提供包含线性共轭烃的前体，在基底上沉积来自前体的烃层，以及通过向基底施加能量从烃层形成石墨烯。 前体可以包括模板分子，例如多核芳族化合物，并且可以通过旋转，喷雾，通过浸渍，或通过冷凝沉积在基材上。 能量可以作为辐射能，热能或等离子体能量施加。

    ULTRA-SMOOTH LAYER ULTRAVIOLET LITHOGRAPHY MIRRORS AND BLANKS, AND MANUFACTURING AND LITHOGRAPHY SYSTEMS THEREFOR
    2.
    发明申请
    ULTRA-SMOOTH LAYER ULTRAVIOLET LITHOGRAPHY MIRRORS AND BLANKS, AND MANUFACTURING AND LITHOGRAPHY SYSTEMS THEREFOR 有权
    超薄平板超薄膜平版镜和空白，以及其制造和成像系统

    公开(公告)号：US20140268083A1

    公开(公告)日：2014-09-18

    申请号：US14139507

    申请日：2013-12-23

    Applicant: Applied Materials, Inc.

    Inventor： Soumendra N. Barman ,  Cara Beasley ,  Abhijit Basu Mallick ,  Ralf Hofmann ,  Nitin K. Ingle

    IPC: G03F1/24 ,  G03F7/16 ,  G03F7/20

    CPC classification number: G03F1/24 ,  G03F7/164 ,  G03F7/70316 ,  G03F7/70958 ,  G21K1/062 ,  G21K2201/067

    Abstract: An extreme ultraviolet mirror or blank production system includes: a first deposition system for depositing a planarization layer over a semiconductor substrate; a second deposition system for depositing an ultra-smooth layer over the planarization layer, the ultra-smooth layer having reorganized molecules; and a third deposition system for depositing a multi-layer stack over the ultra-smooth layer. The extreme ultraviolet blank includes: a substrate; a planarization layer over the substrate; an ultra-smooth layer over the planarization layer, the ultra-smooth layer having reorganized molecules; a multi-layer stack; and capping layers over the multi-layer stack. An extreme ultraviolet lithography system includes: an extreme ultraviolet light source; a mirror for directing light from the extreme ultraviolet light source; a reticle stage for placing an extreme ultraviolet mask blank with a planarization layer and an ultra-smooth layer over the planarization layer; and a wafer stage for placing a wafer.

    Abstract translation: 一种极紫外镜或空白生产系统包括：用于在半导体衬底上沉积平坦化层的第一沉积系统; 用于在所述平坦化层上沉积超光滑层的第二沉积系统，所述超平滑层具有重组的分子; 以及用于在超平滑层上沉积多层堆叠的第三沉积系统。 极紫外线空白包括：基材; 衬底上的平坦化层; 在平坦化层上的超光滑层，超光滑层具有重组的分子; 多层堆叠 并在多层堆叠上覆盖层。 极紫外光刻系统包括：极紫外光源; 用于引导来自极紫外光源的光的反射镜; 用于在平坦化层上放置具有平坦化层和超平滑层的极紫外线掩模坯料的掩模版台; 以及用于放置晶片的晶片台。

    EXTREME ULTRAVIOLET MASK BLANK PRODUCTION SYSTEM WITH THIN ABSORBER AND MANUFACTURING SYSTEM THEREFOR
    4.
    发明申请
    EXTREME ULTRAVIOLET MASK BLANK PRODUCTION SYSTEM WITH THIN ABSORBER AND MANUFACTURING SYSTEM THEREFOR 有权
    超薄紫外线掩模生产系统及其制造系统

    公开(公告)号：US20160011499A1

    公开(公告)日：2016-01-14

    申请号：US14620114

    申请日：2015-02-11

    Applicant: Applied Materials, Inc.

    Inventor： Vinayak Vishwanath Hassan ,  Majeed A. Foad ,  Cara Beasley ,  Ralf Hofmann

    IPC: G03F1/22 ,  C23C16/04 ,  C23C14/04

    CPC classification number: G03F1/24 ,  C23C14/042 ,  C23C16/042 ,  C23C28/00 ,  C23C28/322 ,  C23C28/34 ,  C23C28/42 ,  C23C28/44 ,  G03F1/22 ,  G03F1/54 ,  G03F7/70033

    Abstract: An extreme ultraviolet (EUV) mask blank production system includes: a substrate handling vacuum chamber for creating a vacuum; a substrate handling platform, in the vacuum, for transporting an ultra-low expansion substrate loaded in the substrate handling vacuum chamber; and multiple sub-chambers, accessed by the substrate handling platform, for forming an EUV mask blank includes: a multi-layer stack, formed above the ultra-low expansion substrate, for reflecting an extreme ultraviolet (EUV) light, and an absorber layer, formed above the multi-layer stack, for absorbing the EUV light at a wavelength of 13.5 nm includes the absorber layer has a thickness of less than 80nm and less than 2% reflectivity.

    Abstract translation: 极紫外（EUV）掩模坯生产系统包括：用于产生真空的基板处理真空室; 在真空中用于输送负载在基板处理真空室中的超低膨胀基板的基板处理平台; 以及用于形成EUV掩模坯料的基板处理平台所接近的多个子室包括：形成在超低膨胀基板上方的用于反射极紫外（EUV）光的多层堆叠，以及吸收层 形成在多层叠层上方，用于吸收波长13.5nm的EUV光，包括吸收层的厚度小于80nm且小于2％的反射率。

    Ultra-smooth layer ultraviolet lithography mirrors and blanks, and manufacturing and lithography systems therefor
    10.
    发明授权
    Ultra-smooth layer ultraviolet lithography mirrors and blanks, and manufacturing and lithography systems therefor 有权
    超光滑层紫外光刻镜和坯料，以及其制造和光刻系统

    公开(公告)号：US09417515B2

    公开(公告)日：2016-08-16

    申请号：US14139507

    申请日：2013-12-23

    Applicant: Applied Materials, Inc.

    Inventor： Soumendra N. Barman ,  Cara Beasley ,  Abhijit Basu Mallick ,  Ralf Hofmann ,  Nitin K. Ingle

    IPC: G03F1/24 ,  G03F1/22 ,  G03F7/20 ,  G21K1/06 ,  G03F7/16

    CPC classification number: G03F1/24 ,  G03F7/164 ,  G03F7/70316 ,  G03F7/70958 ,  G21K1/062 ,  G21K2201/067

    Abstract: An extreme ultraviolet mirror or blank production system includes: a first deposition system for depositing a planarization layer over a semiconductor substrate; a second deposition system for depositing an ultra-smooth layer over the planarization layer, the ultra-smooth layer having reorganized molecules; and a third deposition system for depositing a multi-layer stack over the ultra-smooth layer. The extreme ultraviolet blank includes: a substrate; a planarization layer over the substrate; an ultra-smooth layer over the planarization layer, the ultra-smooth layer having reorganized molecules; a multi-layer stack; and capping layers over the multi-layer stack. An extreme ultraviolet lithography system includes: an extreme ultraviolet light source; a mirror for directing light from the extreme ultraviolet light source; a reticle stage for placing an extreme ultraviolet mask blank with a planarization layer and an ultra-smooth layer over the planarization layer; and a wafer stage for placing a wafer.

    Abstract translation: 一种极紫外镜或空白生产系统包括：用于在半导体衬底上沉积平坦化层的第一沉积系统; 用于在所述平坦化层上沉积超光滑层的第二沉积系统，所述超平滑层具有重组的分子; 以及用于在超平滑层上沉积多层堆叠的第三沉积系统。 极紫外线空白包括：基材; 衬底上的平坦化层; 在平坦化层上的超光滑层，超光滑层具有重组的分子; 多层堆叠 并在多层堆叠上覆盖层。 极紫外光刻系统包括：极紫外光源; 用于引导来自极紫外光源的光的镜子; 用于在平坦化层上放置具有平坦化层和超平滑层的极紫外线掩模坯料的掩模版台; 以及用于放置晶片的晶片台。

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