Invention Grant
- Patent Title: Multi-die fine grain integrated voltage regulation
- Patent Title (中): 多模细晶集成电压调节
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Application No.: US14077512Application Date: 2013-11-12
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Publication No.: US09595526B2Publication Date: 2017-03-14
- Inventor: Jared L. Zerbe , Emerson S. Fang , Jun Zhai , Shawn Searles
- Applicant: Apple Inc.
- Applicant Address: US CA Cupertino
- Assignee: Apple Inc.
- Current Assignee: Apple Inc.
- Current Assignee Address: US CA Cupertino
- Agency: Meyertons, Hood, Kivlin, Kowert & Goetzel, P.C.
- Agent Gareth M. Sampson; Lawrence J. Merkel
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L27/10 ; H01L23/48 ; H01L23/13 ; H01L23/64 ; H01L25/16 ; H01L25/18 ; H01G4/228 ; H01L49/02 ; H01L23/00 ; H01L25/065 ; H01L25/10 ; H01L23/498 ; H01L23/50
Abstract:
A semiconductor device package is described that includes a power consuming device (such as an SOC device). The power consuming device may include one or more current consuming elements. A passive device may be coupled to the power consuming device. The passive device may include a plurality of passive elements formed on a semiconductor substrate. The passive elements may be arranged in an array of structures on the semiconductor substrate. The power consuming device and the passive device may be coupled using one or more terminals. The passive device and power consuming device coupling may be configured in such a way that the power consuming device determines functionally the way the passive device elements will be used.
Public/Granted literature
- US20150041955A1 Multi-Die Fine Grain Integrated Voltage Regulation Public/Granted day:2015-02-12
Information query
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