Invention Grant
- Patent Title: Fabrication of a transistor including a tunneling layer
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Application No.: US14604544Application Date: 2015-01-23
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Publication No.: US09601617B2Publication Date: 2017-03-21
- Inventor: Jun Yuan , Xia Li , Bin Yang
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agency: Toler Law Group, PC
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/161 ; H01L29/66 ; H01L29/51 ; H01L29/49 ; H01L21/28 ; H01L29/739
Abstract:
In a particular embodiment, an apparatus includes an electron tunnel structure. The electron tunnel structure includes a tunneling layer, a channel layer, a source layer, and a drain layer. The tunneling layer and the channel layer are positioned between the source layer and the drain layer. The transistor device further includes a high-k dielectric layer adjacent to the electron tunnel structure.
Public/Granted literature
- US20160218211A1 FABRICATION OF A TRANSISTOR INCLUDING A TUNNELING LAYER Public/Granted day:2016-07-28
Information query
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