Invention Grant
- Patent Title: Manufacturing method of circuit substrate
-
Application No.: US13552654Application Date: 2012-07-19
-
Publication No.: US09603263B2Publication Date: 2017-03-21
- Inventor: Chih-Hong Chuang , Tzu-Wei Huang
- Applicant: Chih-Hong Chuang , Tzu-Wei Huang
- Applicant Address: TW Hsinchu County
- Assignee: Subtron Technology Co., Ltd.
- Current Assignee: Subtron Technology Co., Ltd.
- Current Assignee Address: TW Hsinchu County
- Agency: Jianq Chyun IP Office
- Priority: TW98145638A 20091229; TW99112313A 20100420; TW99141954A 20101202
- Main IPC: H05K3/00
- IPC: H05K3/00 ; H05K3/42

Abstract:
A manufacturing method of a circuit substrate includes the following steps. The peripheries of two metal layers are bonded to form a sealed area. At least a through hole passing through the sealed area is formed. Two insulating layers are formed on the two metal layers. Two conductive layers are formed on the two insulating layers. The two insulating layers and the two conductive layers are laminated to the two metal layers bonded to each other, wherein the metal layers are embedded between the two insulating layers, and the two insulating layers fill into the through hole. The sealed area of the two metal layers is separated to form two separated circuit substrates. Therefore, the thinner substrate can be operated in the following steps, such as patterning process or plating process. In addition, the method may be extended to manufacture the circuit substrate with odd-numbered layer or even-numbered layer.
Public/Granted literature
- US20120279630A1 MANUFACTURING METHOD OF CIRCUIT SUBSTRATE Public/Granted day:2012-11-08
Information query