- 专利标题: Method for selecting polycrystalline silicon rod, and method for producing single crystalline silicon
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申请号: US14111597申请日: 2012-04-04
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公开(公告)号: US09605356B2公开(公告)日: 2017-03-28
- 发明人: Shuichi Miyao , Junichi Okada , Shigeyoshi Netsu
- 申请人: Shuichi Miyao , Junichi Okada , Shigeyoshi Netsu
- 申请人地址: JP Tokyo
- 专利权人: Shin-Etsu Chemical Co., Ltd.
- 当前专利权人: Shin-Etsu Chemical Co., Ltd.
- 当前专利权人地址: JP Tokyo
- 代理机构: Oblon, McClelland, Maier & Neustadt, L.L.P.
- 优先权: JP2011-124439 20110602
- 国际申请: PCT/JP2012/002361 WO 20120404
- 国际公布: WO2012/164803 WO 20121206
- 主分类号: C30B13/00
- IPC分类号: C30B13/00 ; C30B29/06 ; C01B33/035 ; C30B35/00 ; C30B15/00 ; G01N23/207
摘要:
Plate-like samples each having as a principal plane thereof a cross section perpendicular to the long axis direction of a polycrystalline silicon rod grown by the deposition using a chemical vapor deposition method are sampled; an X-ray diffraction measurement is performed omnidirectionally in the plane of each of the plate-like samples thus sampled; and when none of the plate-like samples has any X-ray diffraction peak with a diffraction intensity deviating from the average value ±2×standard deviation (μ±2σ) found for any one of the Miller indices , , and , the polycrystalline silicon rod is selected as the raw material for use in the production of single-crystalline silicon. The use of such a polycrystalline silicon raw material suppresses the local occurrence of the portions remaining unmelted, and can contribute to the stable production of single-crystalline silicon.