公开(公告)号：US09605356B2

公开(公告)日：2017-03-28

申请号：US14111597

申请日：2012-04-04

申请人： Shuichi Miyao ,  Junichi Okada ,  Shigeyoshi Netsu

发明人： Shuichi Miyao ,  Junichi Okada ,  Shigeyoshi Netsu

IPC分类号： C30B13/00 ,  C30B29/06 ,  C01B33/035 ,  C30B35/00 ,  C30B15/00 ,  G01N23/207

CPC分类号： C30B13/00 ,  C01B33/035 ,  C30B15/00 ,  C30B29/06 ,  C30B35/007 ,  G01N23/207

摘要： Plate-like samples each having as a principal plane thereof a cross section perpendicular to the long axis direction of a polycrystalline silicon rod grown by the deposition using a chemical vapor deposition method are sampled; an X-ray diffraction measurement is performed omnidirectionally in the plane of each of the plate-like samples thus sampled; and when none of the plate-like samples has any X-ray diffraction peak with a diffraction intensity deviating from the average value ±2×standard deviation (μ±2σ) found for any one of the Miller indices , , and , the polycrystalline silicon rod is selected as the raw material for use in the production of single-crystalline silicon. The use of such a polycrystalline silicon raw material suppresses the local occurrence of the portions remaining unmelted, and can contribute to the stable production of single-crystalline silicon.

公开(公告)号：US20140033966A1

公开(公告)日：2014-02-06

申请号：US14111597

申请日：2012-04-04

申请人： Shuichi Miyao ,  Junichi Okada ,  Shigeyoshi Netsu

发明人： Shuichi Miyao ,  Junichi Okada ,  Shigeyoshi Netsu

IPC分类号： C30B13/00 ,  G01N23/207 ,  C30B15/00

CPC分类号： C30B13/00 ,  C01B33/035 ,  C30B15/00 ,  C30B29/06 ,  C30B35/007 ,  G01N23/207

摘要： Plate-like samples each having as a principal plane thereof a cross section perpendicular to the long axis direction of a polycrystalline silicon rod grown by the deposition using a chemical vapor deposition method are sampled; an X-ray diffraction measurement is performed omnidirectionally in the plane of each of the plate-like samples thus sampled; and when none of the plate-like samples has any X-ray diffraction peak with a diffraction intensity deviating from the average value ±2×standard deviation (μ±2σ) found for any one of the Miller indices , , and , the polycrystalline silicon rod is selected as the raw material for use in the production of single-crystalline silicon. The use of such a polycrystalline silicon raw material suppresses the local occurrence of the portions remaining unmelted, and can contribute to the stable production of single-crystalline silicon.

摘要翻译： 对采用化学气相沉积法沉积生长的多晶硅棒的垂直于长轴方向的截面为主面的板状样品进行取样; 在如此采样的每个板状样品的平面中全方位地进行X射线衍射测量; 并且当板状样品没有任何X射线衍射峰的衍射强度偏离了对于Miller指数<111>，<220>中的任何一个的平均值±2×标准偏差（μ±2sigma）时， ，<311>和<400>，选择多晶硅棒作为单晶硅生产中使用的原料。 使用这种多晶硅原料抑制局部发生未熔化的部分，有助于稳定生产单晶硅。

公开(公告)号：US20130102092A1

公开(公告)日：2013-04-25

申请号：US13808404

申请日：2011-07-04

申请人： Shigeyoshi Netsu ,  Fumitaka Kume ,  Junichi Okada

发明人： Shigeyoshi Netsu ,  Fumitaka Kume ,  Junichi Okada

IPC分类号： H01L21/66

CPC分类号： H01L22/12 ,  C01B33/035 ,  G01M7/08 ,  G01N29/045 ,  G01N29/12 ,  G01N29/4418 ,  G01N29/4454 ,  G01N29/46 ,  G01N2291/0234 ,  G01N2291/2626 ,  G01N2291/2697 ,  H01L2224/16 ,  H01L2924/0002 ,  H01L2924/00

摘要： The length of the polycrystalline silicon rod (100) is measured with a tape measure, then the polycrystalline silicon rod (100) is hit with a hammer (120), and this hammering sound is recorded in a recorder (140) through a microphone (130). Then, an acoustic signal of the hammering sound is subjected to a fast Fourier transform and a frequency distribution is displayed. Furthermore, a peak frequency f is detected which shows the largest sound volume in the frequency distribution obtained after the fast Fourier transform. The relationship between the length (L) of the polycrystalline silicon rod and the peak frequency f is obtained, and the firmness of the polycrystalline silicon rod is determined on the basis of whether or not the peak frequency f is in a range of f≧1,471/L (region A).

摘要翻译： 用卷尺测量多晶硅棒（100）的长度，然后用锤子（120）击打多晶硅棒（100），并将该锤击声通过麦克风（140）记录在记录器（140）中 130）。 然后，对锤击声的声信号进行快速傅里叶变换，并显示频率分布。 此外，检测出在快速傅里叶变换之后获得的频率分布中的最大音量的峰值频率f。 获得多晶硅棒的长度（L）与峰值频率f之间的关系，并且基于峰值频率f是否在f> =的范围内来确定多晶硅棒的坚固度， 1,471 / L（A区）。

公开(公告)号：US09006002B2

公开(公告)日：2015-04-14

申请号：US13808404

申请日：2011-07-04

申请人： Shigeyoshi Netsu ,  Fumitaka Kume ,  Junichi Okada

发明人： Shigeyoshi Netsu ,  Fumitaka Kume ,  Junichi Okada

IPC分类号： H01L21/00 ,  H01L21/66 ,  G01R31/26 ,  C01B33/035 ,  G01N29/04 ,  G01N29/44 ,  G01N29/46 ,  G01N29/12

CPC分类号： H01L22/12 ,  C01B33/035 ,  G01M7/08 ,  G01N29/045 ,  G01N29/12 ,  G01N29/4418 ,  G01N29/4454 ,  G01N29/46 ,  G01N2291/0234 ,  G01N2291/2626 ,  G01N2291/2697 ,  H01L2224/16 ,  H01L2924/0002 ,  H01L2924/00

摘要： The length of the polycrystalline silicon rod (100) is measured with a tape measure, then the polycrystalline silicon rod (100) is hit with a hammer (120), and this hammering sound is recorded in a recorder (140) through a microphone (130). Then, an acoustic signal of the hammering sound is subjected to a fast Fourier transform and a frequency distribution is displayed. Furthermore, a peak frequency f is detected which shows the largest sound volume in the frequency distribution obtained after the fast Fourier transform. The relationship between the length (L) of the polycrystalline silicon rod and the peak frequency f is obtained, and the firmness of the polycrystalline silicon rod is determined on the basis of whether or not the peak frequency f is in a range of f≧1,471/L (region A).

摘要翻译： 用卷尺测量多晶硅棒（100）的长度，然后用锤子（120）击打多晶硅棒（100），并将该锤击声通过麦克风（140）记录在记录器（140）中 130）。 然后，对锤击声的声信号进行快速傅里叶变换，并显示频率分布。 此外，检测出在快速傅里叶变换之后获得的频率分布中的最大音量的峰值频率f。 获得多晶硅棒的长度（L）与峰值频率f之间的关系，根据峰值频率f是否在f≥1.471的范围内来确定多晶硅棒的坚固度 / L（区域A）。

公开(公告)号：US20120175613A1

公开(公告)日：2012-07-12

申请号：US13496693

申请日：2010-07-21

申请人： Shigeyoshi Netsu ,  Junichi Okada ,  Fumitaka Kume

发明人： Shigeyoshi Netsu ,  Junichi Okada ,  Fumitaka Kume

IPC分类号： H01L29/04 ,  H01L21/205

CPC分类号： C01B33/035 ,  C01B33/037

摘要： The present invention provides a clean and high-purity polycrystalline silicon mass having a small content of chromium, iron, nickel, copper, and cobalt in total, which are heavy metal impurities that reduce the quality of single-crystal silicon. In the vicinity of an electrode side end of a polycrystalline silicon rod obtained by the Siemens method, the total of the chromium, iron, nickel, copper, and cobalt concentrations is high. Accordingly, before a crushing step of a polycrystalline silicon rod 100, a removing step of removing at least 70 mm of a polycrystalline silicon portion from the electrode side end of the polycrystalline silicon rod 100 extracted to the outside of a reactor is provided. Thereby, the polycrystalline silicon portion in which the total of the chromium, iron, nickel, copper, and cobalt concentrations in a bulk is not less than 150 ppta can be removed.

摘要翻译： 本发明提供了一种清洁，高纯度的多晶硅质量体，它们总共含有少量的铬，铁，镍，铜和钴，这是降低单晶硅质量的重金属杂质。 在通过西门子方法获得的多晶硅棒的电极侧端附近，铬，铁，镍，铜和钴的总量高。 因此，在多晶硅棒100的破碎步骤之前，提供从提取到反应器外部的多晶硅棒100的电极侧端部去除至少70mm的多晶硅部分的去除步骤。 因此，可以除去其中大体积中铬，铁，镍，铜和钴的总浓度不低于150ppta的多晶硅部分。

公开(公告)号：US08328935B2

公开(公告)日：2012-12-11

申请号：US12418165

申请日：2009-04-03

申请人： Michihiro Mizuno ,  Shinichi Kurotani ,  Shigeyoshi Netsu ,  Kyoji Oguro

发明人： Michihiro Mizuno ,  Shinichi Kurotani ,  Shigeyoshi Netsu ,  Kyoji Oguro

IPC分类号： C30B23/00 ,  C30B25/00 ,  C30B28/12 ,  C30B28/14

CPC分类号： C01B33/03 ,  C01B33/035

摘要： The present invention is a method of manufacturing polycrystalline silicon rods, wherein silicon is deposited onto a silicon core wire by a chemical vapor deposition (CVD) method such that a silicon member, which is cut out from a single-crystalline silicon ingot at an off-angle range of 5 to 40 degrees relative to a crystal habit line of the ingot, is used as the silicon core wire. The single-crystalline silicon ingot is preferably grown by a Czochralski (CZ) method or floating zone (FZ) method, such that the ingot preferably has an interstitial oxygen concentration of 7 ppma to 20 ppma. Silicon rods produced by this method are less likely to suffer a breakage caused by cleavage during the growth process of polycrystalline silicon during CVD, and exhibit improved FZ method success rates. The polycrystalline silicon rods produced by this method also have low impurity contamination and high single-crystallization efficiency.

摘要翻译： 本发明是一种制造多晶硅棒的方法，其中通过化学气相沉积（CVD）方法将硅沉积到硅芯线上，使得从断开的单晶硅锭切出的硅构件 使用相对于锭的晶体习性线5〜40度的角度范围，作为硅芯线。 单晶硅锭优选通过切克劳斯基（CZ）法或浮动区（FZ）法生长，使得锭优选具有7ppma至20ppma的间隙氧浓度。 通过该方法制造的硅棒在CVD期间不太可能在多晶硅生长过程中由于断裂引起的断裂，并且显示出改进的FZ方法成功率。 通过该方法制造的多晶硅棒也具有低杂质污染和高单结晶效率。

公开(公告)号：US20090057840A1

公开(公告)日：2009-03-05

申请号：US12263867

申请日：2008-11-03

申请人： Shigeyoshi Netsu ,  Hisashi Masumura

发明人： Shigeyoshi Netsu ,  Hisashi Masumura

IPC分类号： H01L23/00

CPC分类号： H01L21/02024 ,  B24B37/345

摘要： The present invention provides a wafer manufacturing method and a wafer polishing apparatus which enable control of sags in a periphery of a wafer and improvement of nanotopology values thereof that is strongly required recently, and a wafer. In a polishing process for making a mirror surface of the wafer, a back surface of the wafer is polished to produce a reference plane thereof.

摘要翻译： 本发明提供一种晶片制造方法和晶片抛光装置，其能够控制晶片周边的下垂和最近需要强烈要求的纳米拓扑学值的改善以及晶片。 在用于制造晶片的镜面的抛光工艺中，抛光晶片的后表面以产生其参考平面。

公开(公告)号：US20050085017A1

公开(公告)日：2005-04-21

申请号：US10502389

申请日：2003-01-22

申请人： Tatsuo Ito ,  Shigeyoshi Netsu ,  Masashi Ichikawa ,  Nobuhiro Ohara

发明人： Tatsuo Ito ,  Shigeyoshi Netsu ,  Masashi Ichikawa ,  Nobuhiro Ohara

IPC分类号： G05B19/418 ,  G06Q10/00 ,  G06Q50/00 ,  G06Q50/04 ,  H01L21/02 ,  H01L21/48

CPC分类号： G06Q10/06 ,  G05B19/418 ,  G05B2219/32024 ,  G06Q10/087 ,  Y02P90/02 ,  Y02P90/18

摘要： The present invention provides a method for manufacturing a semiconductor wafer comprising steps of obtaining information of a device manufacturing process, selecting a wafer manufacturing process corresponding thereto, and manufacturing a semiconductor wafer according to the selected wafer manufacturing process. The present invention also provides a method for receiving an order for manufacture of a semiconductor wafer comprising a step of connecting a device maker with a customer computer in a wafer maker, a step wherein the customer computer receives information of a device manufacturing process and a step of selecting a wafer manufacturing process corresponding thereto, and provides a system for receiving an order for manufacture of a semiconductor wafer comprising a client terminal in a device maker and a customer computer in a wafer maker wherein information of a device manufacturing process is inputted into the client terminal and is sent, the customer computer receives the information of the device manufacturing process, and a wafer manufacturing process corresponding thereto is selected. Thereby, there can be provided a method for manufacturing a semiconductor wafer, a method for receiving an order for manufacture of a semiconductor wafer, and a system for receiving an order wherein a wafer suitable for a device manufacturing process in a device maker is supplied.

摘要翻译： 本发明提供一种制造半导体晶片的方法，包括以下步骤：根据所选择的晶片制造工艺获得器件制造工艺的信息，选择与之对应的晶片制造工艺，以及制造半导体晶片。 本发明还提供了一种用于接收制造半导体晶片的顺序的方法，包括在晶片制造机中将设备制造商与客户计算机连接的步骤，其中客户计算机接收设备制造过程的信息和步骤 选择与之对应的晶片制造工艺，并且提供一种用于接收制造半导体晶圆的系统的系统，该半导体晶片包括在晶片制造商中的设备制造商和客户计算机中的客户终端，其中将器件制造过程的信息输入到 客户终端被发送，客户计算机接收设备制造过程的信息，并且选择与其对应的晶片制造过程。 因此，可以提供一种用于制造半导体晶片的方法，用于接收半导体晶片的制造顺序的方法，以及用于接收其中提供适合于器件制造商中的器件制造工艺的晶片的顺序的系统。

公开(公告)号：US5725753A

公开(公告)日：1998-03-10

申请号：US638233

申请日：1996-04-26

申请人： Yasuyuki Harada ,  Shigeyoshi Netsu

发明人： Yasuyuki Harada ,  Shigeyoshi Netsu

IPC分类号： B08B3/10 ,  C02F1/36 ,  C02F1/461 ,  H01L21/00 ,  H01L21/304 ,  H01L21/306

CPC分类号： H01L21/02052 ,  B08B3/10 ,  C02F1/4618 ,  H01L21/67057 ,  C02F1/36 ,  C02F2001/4619 ,  C02F2201/4611 ,  C02F2201/46115 ,  C02F2201/46195

摘要： An improvement is proposed in the cleaning treatment of semiconductor silicon wafers in which the conventional step of cleaning with an aqueous solution of an alkali is replaced with a cleaning treatment with a temporarily alkaline pure water which is produced electrolytically by the application of a DC voltage between a cathode and an anode bonded to the surfaces of a hydrogen-ion exchange membrane so that the alkaline cleaning treatment can be performed under mild conditions so as to eliminate the troubles due to formation of COPs unavoidable in the conventional process. In addition, the pure water rinse following the alkali cleaning of the wafers before transfer to the succeeding acidic cleaning step can be omitted to greatly contribute to the improvement of productivity. The apparatus used therefor comprises a rectangular vessel divided into a central cathode compartment, in which the wafers are held in a vertical disposition within an up-flow of pure water, and a pair of anode compartments by partitioning with a pair of hydrogen-ion exchange membranes, on both sides of which a cathode plate and anode plate are bonded.

摘要翻译： 在半导体硅晶片的清洗处理中提出了一种改进，其中用碱性水溶液进行清洁的常规步骤被用临时碱性纯水清洗处理代替，所述临时碱性纯水通过在 结合到氢离子交换膜的表面的阴极和阳极，使得碱性清洁处理可以在温和条件下进行，以消除由于形成常规方法中不可避免的COP的麻烦。 此外，在转移到后续的酸性清洁步骤之前，在晶片的碱清洗之后的纯水冲洗可以被省略，以极大地有助于提高生产率。 所使用的装置包括分成中央阴极室的矩形容器，其中晶片在纯水的上升流中保持垂直布置，并且一对阳极室通过用一对氢离子交换 膜，其两侧粘合阴极板和阳极板。

公开(公告)号：US09193596B2

公开(公告)日：2015-11-24

申请号：US13496002

申请日：2010-07-09

申请人： Shigeyoshi Netsu ,  Kyoji Oguro ,  Takaaki Shimizu ,  Yasushi Kurosawa ,  Fumitaka Kume

发明人： Shigeyoshi Netsu ,  Kyoji Oguro ,  Takaaki Shimizu ,  Yasushi Kurosawa ,  Fumitaka Kume

IPC分类号： C01B33/02 ,  B01J19/00 ,  C01B33/035 ,  C22C1/02

CPC分类号： C01B33/035 ,  C22C1/02 ,  Y02P20/124

摘要： An inner wall 11 of a reactor 10 has a two-layer structure: an anticorrosive layer 11a comprising an alloy material having high anticorrosiveness is provided on the inner side of the reactor contacting a corrosive process gas, and a heat conductive layer 11b for efficiently conducting the heat within the reactor 10 from an inner wall surface to a coolant flow passage 13 is provided on the outer side of the reactor (outer-wall side). The anticorrosive layer 11a comprises an alloy material having a composition for which a value R, defined by R=[Cr]+[Ni]−1.5 [Si], is not less than 40% wherein [Cr] is a mass content (% by mass) of chromium (Cr), [Ni] is a mass content (% by mass) of nickel (Ni), and [Si] is a mass content (% by mass) of silicon (Si).

摘要翻译： 反应器10的内壁11具有两层结构：在与腐蚀性工艺气体接触的反应器的内侧设置有包括具有高防锈性的合金材料的防腐蚀层11a和用于有效导电的导热层11b 在反应器10的外侧（外壁侧）设置有从内壁面到冷却剂流路13的反应器10内的热量。 防腐层11a包括具有由R = [Cr] + [Ni] -1.5 [Si]定义的值R为40％以上的组成的合金材料，其中[Cr]为质量含量（％ （Cr），[Ni]为镍（Ni）的质量含量（质量％），[Si]为硅（Si）的质量含量（质量％）。