Invention Grant
- Patent Title: Thermal diffusion doping of diamond
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Application No.: US14508187Application Date: 2014-10-07
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Publication No.: US09605359B2Publication Date: 2017-03-28
- Inventor: Zhenqiang Ma , Jung-Hun Seo
- Applicant: Wisconsin Alumni Research Foundation
- Applicant Address: US WI Madison
- Assignee: Wisconsin Alumni Research Foundation
- Current Assignee: Wisconsin Alumni Research Foundation
- Current Assignee Address: US WI Madison
- Agency: Bell & Manning, LLC
- Main IPC: C30B31/02
- IPC: C30B31/02 ; C30B29/04 ; C30B33/02 ; H01L29/16 ; H01L21/324 ; H01L21/04
Abstract:
Boron-doped diamond and methods for making it are provided. The doped diamond is made using an ultra-thin film of heavily boron-doped silicon as a dopant carrying material in a low temperature thermal diffusion doping process.
Public/Granted literature
- US20160097145A1 THERMAL DIFFUSION DOPING OF DIAMOND Public/Granted day:2016-04-07
Information query
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