In one embodiment, a memory cell circuit for storing data includes a pair of cross-coupled inverters for storing states of the memory cell circuit. Access devices provide access to the pair of cross-coupled inverters. The memory cell circuit also includes a set of electrically inactive p-type metal oxide semiconductor (PMOS) devices that are coupled to the pair of cross-coupled inverters. The set of electrically inactive PMOS devices in combination with a portion (e.g., PMOS devices) of the pair of cross-coupled inverters enables a continuous p-type diffusion layer for the memory cell circuit.