Invention Grant
- Patent Title: ESD-protection circuit for integrated circuit device
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Application No.: US14167331Application Date: 2014-01-29
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Publication No.: US09607978B2Publication Date: 2017-03-28
- Inventor: Philippe Deval , Marija Fernandez , Patrick Besseux , Rohan Braithwaite
- Applicant: Microchip Technology Incorporated
- Applicant Address: US AZ Chandler
- Assignee: MICROCHIP TECHNOLOGY INCORPORATED
- Current Assignee: MICROCHIP TECHNOLOGY INCORPORATED
- Current Assignee Address: US AZ Chandler
- Agency: Slayden Grubert Beard PLLC
- Main IPC: H01L27/02
- IPC: H01L27/02 ; H01L29/66 ; H01L27/12 ; H01L29/739 ; H01L29/74
Abstract:
A double-diffused metal oxide semiconductor (DMOS) structure is configured as an open drain output driver having electrostatic discharge (ESD) protection and a reverse voltage blocking diode inherent in the structure and without requiring metal connections for the ESD and reverse voltage blocking diode protections.
Public/Granted literature
- US20140210007A1 ESD-Protection Circuit for Integrated Circuit Device Public/Granted day:2014-07-31
Information query
IPC分类:
