Invention Grant
- Patent Title: Memory cells, methods of fabrication, and semiconductor devices
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Application No.: US14030763Application Date: 2013-09-18
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Publication No.: US09608197B2Publication Date: 2017-03-28
- Inventor: Manzar Siddik , Andy Lyle , Witold Kula
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: TraskBritt
- Main IPC: H01L43/10
- IPC: H01L43/10 ; H01L43/12 ; H01L43/08

Abstract:
A magnetic cell includes an attracter material proximate to a magnetic region (e.g., a free region). The attracter material is formulated to have a higher chemical affinity for a diffusible species of a magnetic material, from which the magnetic region is formed, compared to a chemical affinity between the diffusible species and at least another species of the magnetic material. Thus, the diffusible species is removed from the magnetic material to the attracter material. The removal accommodates crystallization of the depleted magnetic material. The crystallized, depleted magnetic material enables a high tunnel magnetoresistance, high energy barrier, and high energy barrier ratio. The magnetic region may be formed as a continuous magnetic material, thus enabling a high exchange stiffness, and positioning the magnetic region between two magnetic anisotropy-inducing oxide regions enables a high magnetic anisotropy strength. Methods of fabrication and semiconductor devices are also disclosed.
Public/Granted literature
- US20150076633A1 MEMORY CELLS, METHODS OF FABRICATION, AND SEMICONDUCTOR DEVICES Public/Granted day:2015-03-19
Information query
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