公开(公告)号：US10396278B2

公开(公告)日：2019-08-27

申请号：US15986487

申请日：2018-05-22

Applicant: Micron Technology, Inc.

Inventor： Manzar Siddik ,  Andy Lyle ,  Witold Kula

IPC: H01L43/12 ,  H01L43/10 ,  H01L43/08 ,  G11C11/16

Abstract: A magnetic cell includes an attracter material proximate to a magnetic region (e.g., a free region). The attracter material is formulated to have a higher chemical affinity for a diffusible species of a magnetic material, from which the magnetic region is formed, compared to a chemical affinity between the diffusible species and at least another species of the magnetic material. Thus, the diffusible species is removed from the magnetic material to the attracter material. The removal accommodates crystallization of the depleted magnetic material. The crystallized, depleted magnetic material enables a high tunnel magnetoresistance, high energy barrier, and high energy barrier ratio. The magnetic region may be formed as a continuous magnetic material, thus enabling a high exchange stiffness, and positioning the magnetic region between two magnetic anisotropy-inducing oxide regions enables a high magnetic anisotropy strength. Methods of fabrication and semiconductor devices are also disclosed.

公开(公告)号：US10014466B2

公开(公告)日：2018-07-03

申请号：US15690013

申请日：2017-08-29

Applicant: Micron Technology, Inc.

Inventor： Manzar Siddik ,  Andy Lyle ,  Witold Kula

IPC: H01L43/12 ,  H01L43/08 ,  H01L43/10

CPC classification number: H01L43/12 ,  G11C11/161 ,  H01L43/08 ,  H01L43/10 ,  H05K999/99

Abstract: A magnetic cell includes an attracter material proximate to a magnetic region (e.g., a free region). The attracter material is formulated to have a higher chemical affinity for a diffusible species of a magnetic material, from which the magnetic region is formed, compared to a chemical affinity between the diffusible species and at least another species of the magnetic material. Thus, the diffusible species is removed from the magnetic material to the attracter material. The removal accommodates crystallization of the depleted magnetic material. The crystallized, depleted magnetic material enables a high tunnel magnetoresistance, high energy barrier, and high energy barrier ratio. The magnetic region may be formed as a continuous magnetic material, thus enabling a high exchange stiffness, and positioning the magnetic region between two magnetic anisotropy-inducing oxide regions enables a high magnetic anisotropy strength. Methods of fabrication and semiconductor devices are also disclosed.

公开(公告)号：US20170200887A1

公开(公告)日：2017-07-13

申请号：US15468225

申请日：2017-03-24

Applicant: Micron Technology, Inc.

Inventor： Manzar Siddik ,  Andy Lyle ,  Witold Kula

IPC: H01L43/12 ,  H01L43/08 ,  H01L43/10

CPC classification number: H01L43/12 ,  G11C11/161 ,  H01L43/08 ,  H01L43/10

Abstract: A magnetic cell includes an attracter material proximate to a magnetic region (e.g., a free region). The attracter material is formulated to have a higher chemical affinity for a diffusible species of a magnetic material, from which the magnetic region is formed, compared to a chemical affinity between the diffusible species and at least another species of the magnetic material. Thus, the diffusible species is removed from the magnetic material to the attracter material. The removal accommodates crystallization of the depleted magnetic material. The crystallized, depleted magnetic material enables a high tunnel magnetoresistance, high energy barrier, and high energy barrier ratio. The magnetic region may be formed as a continuous magnetic material, thus enabling a high exchange stiffness, and positioning the magnetic region between two magnetic anisotropy-inducing oxide regions enables a high magnetic anisotropy strength. Methods of fabrication and semiconductor devices are also disclosed.

公开(公告)号：US20170358741A1

公开(公告)日：2017-12-14

申请号：US15690013

申请日：2017-08-29

Applicant: Micron Technology, Inc.

Inventor： Manzar Siddik ,  Andy Lyle ,  Witold Kula

IPC: H01L43/12 ,  H01L43/08 ,  H01L43/10

CPC classification number: H01L43/12 ,  G11C11/161 ,  H01L43/08 ,  H01L43/10

Abstract: A magnetic cell includes an attracter material proximate to a magnetic region (e.g., a free region). The attracter material is formulated to have a higher chemical affinity for a diffusible species of a magnetic material, from which the magnetic region is formed, compared to a chemical affinity between the diffusible species and at least another species of the magnetic material. Thus, the diffusible species is removed from the magnetic material to the attracter material. The removal accommodates crystallization of the depleted magnetic material. The crystallized, depleted magnetic material enables a high tunnel magnetoresistance, high energy barrier, and high energy barrier ratio. The magnetic region may be formed as a continuous magnetic material, thus enabling a high exchange stiffness, and positioning the magnetic region between two magnetic anisotropy-inducing oxide regions enables a high magnetic anisotropy strength. Methods of fabrication and semiconductor devices are also disclosed.

公开(公告)号：US09786841B2

公开(公告)日：2017-10-10

申请号：US15468225

申请日：2017-03-24

Applicant: Micron Technology, Inc.

Inventor： Manzar Siddik ,  Andy Lyle ,  Witold Kula

IPC: H01L43/12 ,  H01L43/10 ,  H01L43/08

CPC classification number: H01L43/12 ,  G11C11/161 ,  H01L43/08 ,  H01L43/10

Abstract: A magnetic cell includes an attracter material proximate to a magnetic region (e.g., a free region). The attracter material is formulated to have a higher chemical affinity for a diffusible species of a magnetic material, from which the magnetic region is formed, compared to a chemical affinity between the diffusible species and at least another species of the magnetic material. Thus, the diffusible species is removed from the magnetic material to the attracter material. The removal accommodates crystallization of the depleted magnetic material. The crystallized, depleted magnetic material enables a high tunnel magnetoresistance, high energy barrier, and high energy barrier ratio. The magnetic region may be formed as a continuous magnetic material, thus enabling a high exchange stiffness, and positioning the magnetic region between two magnetic anisotropy-inducing oxide regions enables a high magnetic anisotropy strength. Methods of fabrication and semiconductor devices are also disclosed.

公开(公告)号：US20180277752A1

公开(公告)日：2018-09-27

申请号：US15986487

申请日：2018-05-22

Applicant: Micron Technology, Inc.

Inventor： Manzar Siddik ,  Andy Lyle ,  Witold Kula

IPC: H01L43/12 ,  H01L43/08 ,  H01L43/10 ,  G11C11/16

CPC classification number: H01L43/12 ,  G11C11/161 ,  H01L43/08 ,  H01L43/10 ,  H05K999/99

Abstract: A magnetic cell includes an attracter material proximate to a magnetic region (e.g., a free region). The attracter material is formulated to have a higher chemical affinity for a diffusible species of a magnetic material, from which the magnetic region is formed, compared to a chemical affinity between the diffusible species and at least another species of the magnetic material. Thus, the diffusible species is removed from the magnetic material to the attracter material. The removal accommodates crystallization of the depleted magnetic material. The crystallized, depleted magnetic material enables a high tunnel magnetoresistance, high energy barrier, and high energy barrier ratio. The magnetic region may be formed as a continuous magnetic material, thus enabling a high exchange stiffness, and positioning the magnetic region between two magnetic anisotropy-inducing oxide regions enables a high magnetic anisotropy strength. Methods of fabrication and semiconductor devices are also disclosed.

公开(公告)号：US09608197B2

公开(公告)日：2017-03-28

申请号：US14030763

申请日：2013-09-18

Applicant: Micron Technology, Inc.

Inventor： Manzar Siddik ,  Andy Lyle ,  Witold Kula

IPC: H01L43/10 ,  H01L43/12 ,  H01L43/08

CPC classification number: H01L43/12 ,  G11C11/161 ,  H01L43/08 ,  H01L43/10

Abstract: A magnetic cell includes an attracter material proximate to a magnetic region (e.g., a free region). The attracter material is formulated to have a higher chemical affinity for a diffusible species of a magnetic material, from which the magnetic region is formed, compared to a chemical affinity between the diffusible species and at least another species of the magnetic material. Thus, the diffusible species is removed from the magnetic material to the attracter material. The removal accommodates crystallization of the depleted magnetic material. The crystallized, depleted magnetic material enables a high tunnel magnetoresistance, high energy barrier, and high energy barrier ratio. The magnetic region may be formed as a continuous magnetic material, thus enabling a high exchange stiffness, and positioning the magnetic region between two magnetic anisotropy-inducing oxide regions enables a high magnetic anisotropy strength. Methods of fabrication and semiconductor devices are also disclosed.

公开(公告)号：US20150076633A1

公开(公告)日：2015-03-19

申请号：US14030763

申请日：2013-09-18

Applicant: Micron Technology, Inc.

Inventor： Manzar Siddik ,  Andy Lyle ,  Witold Kula

IPC: H01L43/10 ,  H01L43/12

CPC classification number: H01L43/12 ,  G11C11/161 ,  H01L43/08 ,  H01L43/10

Abstract: A magnetic cell includes an attracter material proximate to a magnetic region (e.g., a free region). The attracter material is formulated to have a higher chemical affinity for a diffusible species of a magnetic material, from which the magnetic region is formed, compared to a chemical affinity between the diffusible species and at least another species of the magnetic material. Thus, the diffusible species is removed from the magnetic material to the attracter material. The removal accommodates crystallization of the depleted magnetic material. The crystallized, depleted magnetic material enables a high tunnel magneto resistance, high energy barrier, and high energy barrier ratio. The magnetic region may be formed as a continuous magnetic material, thus enabling a high exchange stiffness, and positioning the magnetic region between two magnetic anisotropy-inducing oxide regions enables a high magnetic anisotropy strength. Methods of fabrication and semiconductor devices are also disclosed.

Abstract translation: 磁性电池包括靠近磁性区域（例如，自由区域）的吸收材料。 与可扩散物质和至少另一种磁性材料之间的化学亲和力相比，配方材料被配制为对于可形成磁性材料的可扩散物质形成更高的化学亲和力，从而形成磁性区域。 因此，将可扩散物质从磁性材料中除去至该物质。 去除容纳耗尽的磁性材料的结晶。 结晶化的耗尽磁性材料能够实现高隧道磁阻，高能量势垒和高能量势垒比。 磁性区域可以形成为连续的磁性材料，从而能够实现高的交换刚度，并且将磁性区域定位在两个磁各向异性诱发氧化物区域之间，可以实现高磁各向异性强度。 还公开了制造方法和半导体器件。