In one embodiment, a method of forming a current sensor device includes forming a device region comprising a magnetic sensor within and/or over a semiconductor substrate. The device region is formed adjacent a front side of the semiconductor substrate. The back side of the semiconductor substrate is attached over an insulating substrate, where the back side is opposite the front side. Sidewalls of the semiconductor substrate are exposed by dicing the semiconductor substrate from the front side without completely dicing the insulating substrate. An isolation liner is formed over all of the exposed sidewalls of the semiconductor substrate. The isolation liner and the insulating substrate include a different material. The method further includes separating the insulating substrate to form diced chips, removing at least a portion of the isolation liner from over a top surface of the device region, and forming contacts over the top surface of the device region.