Invention Grant
- Patent Title: Semiconductor resistive memory devices including separately controllable source lines
-
Application No.: US14609977Application Date: 2015-01-30
-
Publication No.: US09620190B2Publication Date: 2017-04-11
- Inventor: Jaekyu Lee , Kiseok Suh
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Ward and Smith, P.A.
- Priority: KR10-2014-0044336 20140414
- Main IPC: G11C11/16
- IPC: G11C11/16 ; G11C13/00 ; G11C13/02
Abstract:
A magnetic memory device can include a plurality of separately controllable magnetic memory segments configured to store data. A plurality of separately controllable source lines can each be coupled to a respective one of the plurality of separately controllable magnetic memory segments.
Public/Granted literature
- US20150294695A1 SEMICONDUCTOR RESISTIVE MEMORY DEVICES INCLUDING SEPARATELY CONTROLLABLE SOURCE LINES Public/Granted day:2015-10-15
Information query
