发明授权
- 专利标题: Thin film capacitor
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申请号: US14799247申请日: 2015-07-14
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公开(公告)号: US09620291B2公开(公告)日: 2017-04-11
- 发明人: Junji Aotani , Shigeaki Tanaka , Katsuyuki Kurachi , Tatsuo Namikawa , Yuuki Aburakawa
- 申请人: TDK CORPORATION
- 申请人地址: JP Tokyo
- 专利权人: TDK CORPORATION
- 当前专利权人: TDK CORPORATION
- 当前专利权人地址: JP Tokyo
- 代理机构: Oliff PLC
- 优先权: JP2014-145779 20140716
- 主分类号: H01G4/30
- IPC分类号: H01G4/30 ; H01G4/33 ; H01G4/012 ; H01G4/01 ; H01G4/015 ; H01G4/12
摘要:
A thin film capacitor including a lower electrode layer, a dielectric layer provided on the lower electrode layer, and an upper electrode layer formed on the dielectric layer, wherein the dielectric layer includes a recessed portion in a portion on the upper face thereof, a cross-sectional structure perpendicular to the dielectric layer of the recessed portion has a cross-sectional taper angle of 1 degree or more and 25 degrees or less, and the distance between the bottom portion center and an outermost portion of the recessed portion is 20 times or more and 150 times or less a thickness of the dielectric layer.
公开/授权文献
- US20160020030A1 THIN FILM CAPACITOR 公开/授权日:2016-01-21