THIN FILM CAPACITOR
    5.
    发明申请
    THIN FILM CAPACITOR 有权
    薄膜电容器

    公开(公告)号:US20130258545A1

    公开(公告)日:2013-10-03

    申请号:US13796986

    申请日:2013-03-12

    CPC classification number: H01G4/306 H01G4/232 H01G4/33 H01G4/38

    Abstract: A thin film capacitor includes two or more of dielectric body layers that are alternately laminated on an under-electrode, and internal electrode layers that are laminated between the dielectric body layers, and are exposed off the dielectric body layer, and a connection electrode that is electrically connected to the internal electrode layers via the exposed portion of the internal electrode layers, A relationship between an average grain size D of crystal grains in the internal electrode layers and an average grain size d of crystal grains in the connection electrode is D>d.

    Abstract translation: 薄膜电容器包括交替层压在底电极上的两个或更多个介电体层,以及叠层在电介质体层之间并从电介质体层露出的内部电极层,以及连接电极, 通过内部电极层的露出部与内部电极层电连接,内部电极层的晶粒的平均粒径D与连接电极的晶粒的平均粒径d之间的关系为D> d 。

    Thin film capacitor
    6.
    发明授权

    公开(公告)号:US09711283B2

    公开(公告)日:2017-07-18

    申请号:US14706486

    申请日:2015-05-07

    CPC classification number: H01G2/10 H01G2/103 H01G4/008 H01G4/10 H01G4/33

    Abstract: A thin film capacitor includes: a laminated body in which a dielectric layer and an upper electrode layer are successively laminated on a base electrode; a protective layer that covers a part of the base electrode, the dielectric layer and the upper electrode layer and includes a through-hole respectively on the base electrode and on the upper electrode layer; and terminal electrodes that are electrically connected with the base electrode and the upper electrode layer through the through-holes of the protective layer. A modulus of longitudinal elasticity (Young's modulus) of the protective layer is 0.1 GPa to 2.0 GPa.

    Thin film capacitor with improved resistance to dielectric breakdown

    公开(公告)号:US09818539B2

    公开(公告)日:2017-11-14

    申请号:US14882013

    申请日:2015-10-13

    CPC classification number: H01G4/12 H01G4/005 H01G4/255 H01G4/33

    Abstract: A thin film capacitor includes a lower electrode layer, an upper electrode layer, and a dielectric substance layer provided between the lower electrode layer and the upper electrode layer. A dielectric patch member formed of a dielectric material is formed on a surface of the dielectric substance layer on an upper electrode layer side, a cross-sectional structure of the dielectric patch member has a taper angle of 1 to 25 degrees in a cross section perpendicular to the dielectric substance layer, the taper angle being an angle formed by (1) a tangential line tangent to an end portion of the dielectric patch member at a position that is 50% of a maximum height of the dielectric patch member and (2) a line being an interface between the dielectric substance layer and the upper electrode layer, and an area of the dielectric patch member is 100 to 900000 μm2.

    Thin film capacitor
    10.
    发明授权
    Thin film capacitor 有权
    薄膜电容器

    公开(公告)号:US09076600B2

    公开(公告)日:2015-07-07

    申请号:US13796986

    申请日:2013-03-12

    CPC classification number: H01G4/306 H01G4/232 H01G4/33 H01G4/38

    Abstract: A thin film capacitor includes two or more of dielectric body layers that are alternately laminated on an under-electrode, and internal electrode layers that are laminated between the dielectric body layers, and are exposed off the dielectric body layer, and a connection electrode that is electrically connected to the internal electrode layers via the exposed portion of the internal electrode layers, A relationship between an average grain size D of crystal grains in the internal electrode layers and an average grain size d of crystal grains in the connection electrode is D>d.

    Abstract translation: 薄膜电容器包括交替层压在底电极上的两个或更多个介电体层,以及叠层在电介质体层之间并从电介质体层露出的内部电极层,以及连接电极, 通过内部电极层的露出部与内部电极层电连接,内部电极层的晶粒的平均粒径D与连接电极的晶粒的平均粒径d之间的关系为D> d 。

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