-
公开(公告)号:US11676767B2
公开(公告)日:2023-06-13
申请号:US17165339
申请日:2021-02-02
Applicant: TDK CORPORATION
Inventor: Yuuki Aburakawa , Tatsuo Namikawa , Akiyasu Iioka , Hitoshi Saita , Kazuhiro Yoshikawa
CPC classification number: H01G4/33 , H01G4/008 , H01G4/306 , H01L23/49822 , H01L23/642 , H01G4/1227 , H01G4/1245 , H01G4/1254
Abstract: Disclosed herein a thin film capacitor that includes a lower electrode layer, an upper electrode layer, and a dielectric layer disposed between the lower electrode layer and the upper electrode layer. The dielectric layer has a through hole. An inner wall surface of the through hole has a first tapered surface and a second tapered surface surrounded by the first tapered surface. The first and second tapered surfaces are not covered with the upper electrode layer and have respective first and second taper angles with respect to a surface of the lower electrode layer. The second taper angle is smaller than the first taper angle.
-
公开(公告)号:US11430611B2
公开(公告)日:2022-08-30
申请号:US17165229
申请日:2021-02-02
Applicant: TDK CORPORATION
Inventor: Yuuki Aburakawa , Tatsuo Namikawa , Akiyasu Iioka , Atsuo Matsutani , Hitoshi Saita , Kazuhiro Yoshikawa
Abstract: Disclosed herein a thin film capacitor that includes a lower electrode layer, an upper electrode layer, and a dielectric layer disposed between the lower electrode layer and the upper electrode layer. The dielectric layer has a through hole. The upper electrode layer has a connection part connected to the lower electrode layer through the through hole and an electrode part insulated from the connection part by a slit. A surface of the lower electrode layer that contacts the connection part through the through hole includes an annular area positioned along an inner wall surface of the through hole and a center area surrounded by the annular area. The annular area is lower in surface roughness than the center area.
-
公开(公告)号:US09773614B2
公开(公告)日:2017-09-26
申请号:US14803560
申请日:2015-07-20
Applicant: TDK CORPORATION
Inventor: Katsuyuki Kurachi , Tatsuo Namikawa , Junji Aotani , Yuuki Aburakawa , Shigeaki Tanaka
Abstract: A thin film capacitor includes a pair of electrode layers, a dielectric layer existing between the pair of electrode layers, and a ceramic layer disposed on a surface opposite to the dielectric layer of at least one of the electrode layers.
-
公开(公告)号:US09620291B2
公开(公告)日:2017-04-11
申请号:US14799247
申请日:2015-07-14
Applicant: TDK CORPORATION
Inventor: Junji Aotani , Shigeaki Tanaka , Katsuyuki Kurachi , Tatsuo Namikawa , Yuuki Aburakawa
Abstract: A thin film capacitor including a lower electrode layer, a dielectric layer provided on the lower electrode layer, and an upper electrode layer formed on the dielectric layer, wherein the dielectric layer includes a recessed portion in a portion on the upper face thereof, a cross-sectional structure perpendicular to the dielectric layer of the recessed portion has a cross-sectional taper angle of 1 degree or more and 25 degrees or less, and the distance between the bottom portion center and an outermost portion of the recessed portion is 20 times or more and 150 times or less a thickness of the dielectric layer.
-
公开(公告)号:US20130258545A1
公开(公告)日:2013-10-03
申请号:US13796986
申请日:2013-03-12
Applicant: TDK CORPORATION
Inventor: Yoshihiko YANO , Tatsuo Namikawa , Yasunobu Oikawa
IPC: H01G4/30
Abstract: A thin film capacitor includes two or more of dielectric body layers that are alternately laminated on an under-electrode, and internal electrode layers that are laminated between the dielectric body layers, and are exposed off the dielectric body layer, and a connection electrode that is electrically connected to the internal electrode layers via the exposed portion of the internal electrode layers, A relationship between an average grain size D of crystal grains in the internal electrode layers and an average grain size d of crystal grains in the connection electrode is D>d.
Abstract translation: 薄膜电容器包括交替层压在底电极上的两个或更多个介电体层,以及叠层在电介质体层之间并从电介质体层露出的内部电极层,以及连接电极, 通过内部电极层的露出部与内部电极层电连接,内部电极层的晶粒的平均粒径D与连接电极的晶粒的平均粒径d之间的关系为D> d 。
-
公开(公告)号:US09711283B2
公开(公告)日:2017-07-18
申请号:US14706486
申请日:2015-05-07
Applicant: TDK CORPORATION
Inventor: Tatsuo Namikawa , Yoshihiko Yano , Yasunobu Oikawa
Abstract: A thin film capacitor includes: a laminated body in which a dielectric layer and an upper electrode layer are successively laminated on a base electrode; a protective layer that covers a part of the base electrode, the dielectric layer and the upper electrode layer and includes a through-hole respectively on the base electrode and on the upper electrode layer; and terminal electrodes that are electrically connected with the base electrode and the upper electrode layer through the through-holes of the protective layer. A modulus of longitudinal elasticity (Young's modulus) of the protective layer is 0.1 GPa to 2.0 GPa.
-
7.
公开(公告)号:US10699844B1
公开(公告)日:2020-06-30
申请号:US16735386
申请日:2020-01-06
Applicant: TDK CORPORATION
Inventor: Hitoshi Saita , Kazuhiro Yoshikawa , Yuuki Aburakawa , Tatsuo Namikawa , Akiyasu Iioka , Kenichi Yoshida
Abstract: Disclosed herein is a thin film capacitor that includes a lower electrode layer, an upper electrode layer, and a dielectric layer positioned between the lower electrode layer and the upper electrode layer. The upper electrode layer has a first capacitive electrode part opposed to the lower electrode layer through the dielectric layer without being connected to the lower electrode layer and a fiducial mark part penetrating the dielectric layer to be connected to the lower electrode layer.
-
公开(公告)号:US10062507B2
公开(公告)日:2018-08-28
申请号:US15331447
申请日:2016-10-21
Applicant: TDK CORPORATION
Inventor: Junji Aotani , Shigeaki Tanaka , Katsuyuki Kurachi , Tatsuo Namikawa , Yuuki Aburakawa
CPC classification number: H01G4/06 , H01G2/14 , H01G4/1227 , H01G4/33 , H01G4/35
Abstract: An electronic device sheet, comprising a pair of electrodes, a dielectric layer provided between the pair of electrodes, and one or more insulation patch members provided on one of principal surfaces of the dielectric layer, wherein the insulation patch member includes a boundary line having an undulating shape.
-
公开(公告)号:US09818539B2
公开(公告)日:2017-11-14
申请号:US14882013
申请日:2015-10-13
Applicant: TDK CORPORATION
Inventor: Junji Aotani , Shigeaki Tanaka , Katsuyuki Kurachi , Tatsuo Namikawa , Yuuki Aburakawa
Abstract: A thin film capacitor includes a lower electrode layer, an upper electrode layer, and a dielectric substance layer provided between the lower electrode layer and the upper electrode layer. A dielectric patch member formed of a dielectric material is formed on a surface of the dielectric substance layer on an upper electrode layer side, a cross-sectional structure of the dielectric patch member has a taper angle of 1 to 25 degrees in a cross section perpendicular to the dielectric substance layer, the taper angle being an angle formed by (1) a tangential line tangent to an end portion of the dielectric patch member at a position that is 50% of a maximum height of the dielectric patch member and (2) a line being an interface between the dielectric substance layer and the upper electrode layer, and an area of the dielectric patch member is 100 to 900000 μm2.
-
公开(公告)号:US09076600B2
公开(公告)日:2015-07-07
申请号:US13796986
申请日:2013-03-12
Applicant: TDK Corporation
Inventor: Yoshihiko Yano , Tatsuo Namikawa , Yasunobu Oikawa
Abstract: A thin film capacitor includes two or more of dielectric body layers that are alternately laminated on an under-electrode, and internal electrode layers that are laminated between the dielectric body layers, and are exposed off the dielectric body layer, and a connection electrode that is electrically connected to the internal electrode layers via the exposed portion of the internal electrode layers, A relationship between an average grain size D of crystal grains in the internal electrode layers and an average grain size d of crystal grains in the connection electrode is D>d.
Abstract translation: 薄膜电容器包括交替层压在底电极上的两个或更多个介电体层,以及叠层在电介质体层之间并从电介质体层露出的内部电极层,以及连接电极, 通过内部电极层的露出部与内部电极层电连接,内部电极层的晶粒的平均粒径D与连接电极的晶粒的平均粒径d之间的关系为D> d 。
-
-
-
-
-
-
-
-
-