Thin film capacitor
    1.
    发明授权

    公开(公告)号:US09831039B2

    公开(公告)日:2017-11-28

    申请号:US14953807

    申请日:2015-11-30

    申请人: TDK CORPORATION

    摘要: A thin film capacitor comprises: a laminated body that has a base electrode, a dielectric layer and an upper electrode layer; a protective layer covering the base electrode, the dielectric layer and the upper electrode layer, and includes a first through-hole that reaches the base electrode, and a second through-hole that reaches the upper electrode layer; a first extraction electrode in the first through-hole and electrically connected with the base electrode; a second extraction electrode in the second through-hole and electrically connected with the upper electrode layer; a first terminal electrode on the protective layer, and connected with the base electrode through the first extraction electrode; and a second terminal electrode on the protective layer, and connected with the upper electrode layer through the second extraction electrode. Young's modulus of the protective layer is equal to or higher than 0.1 GPa and equal to or lower than 2.0 GPa.

    Thin film capacitor with improved resistance to dielectric breakdown

    公开(公告)号:US09818539B2

    公开(公告)日:2017-11-14

    申请号:US14882013

    申请日:2015-10-13

    申请人: TDK CORPORATION

    摘要: A thin film capacitor includes a lower electrode layer, an upper electrode layer, and a dielectric substance layer provided between the lower electrode layer and the upper electrode layer. A dielectric patch member formed of a dielectric material is formed on a surface of the dielectric substance layer on an upper electrode layer side, a cross-sectional structure of the dielectric patch member has a taper angle of 1 to 25 degrees in a cross section perpendicular to the dielectric substance layer, the taper angle being an angle formed by (1) a tangential line tangent to an end portion of the dielectric patch member at a position that is 50% of a maximum height of the dielectric patch member and (2) a line being an interface between the dielectric substance layer and the upper electrode layer, and an area of the dielectric patch member is 100 to 900000 μm2.