Invention Grant
- Patent Title: Control of O-ingress into gate stack dielectric layer using oxygen permeable layer
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Application No.: US14323036Application Date: 2014-07-03
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Publication No.: US09620384B2Publication Date: 2017-04-11
- Inventor: Takashi Ando , Claude Ortolland , Kai Zhao
- Applicant: GLOBALFOUNDRIES Inc.
- Agency: Heslin, Rothenberg, Farley & Mesiti, PC
- Agent George S. Blasiak
- Main IPC: H01L21/3115
- IPC: H01L21/3115 ; H01L21/02 ; H01L21/28 ; H01L29/51 ; H01L29/66 ; H01L29/49

Abstract:
A method of manufacturing a semiconductor structure, by depositing a dielectric layer is a dummy gate, or an existing gate structure, prior to the formation of gate spacers. Following the formation of spacers, and in some embodiments replacing a dummy gate with a final gate structure, oxygen is introduced to a gate dielectric through a diffusion process, using the deposited dielectric layer as a diffusion pathway.
Public/Granted literature
- US20160005620A1 CONTROL OF O-INGRESS INTO GATE STACK DIELECTRIC LAYER USING OXYGEN PERMEABLE LAYER Public/Granted day:2016-01-07
Information query
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