Invention Grant
- Patent Title: MEMS sensor offset compensation with strain gauge
-
Application No.: US14635205Application Date: 2015-03-02
-
Publication No.: US09625329B2Publication Date: 2017-04-18
- Inventor: Ilya Gurin , Joe Seeger
- Applicant: InvenSense, Inc.
- Applicant Address: US CA San Jose
- Assignee: INVENSENSE, INC.
- Current Assignee: INVENSENSE, INC.
- Current Assignee Address: US CA San Jose
- Agency: McAndrews, Held & Malloy, Ltd.
- Main IPC: G01L1/18
- IPC: G01L1/18 ; G01D18/00 ; G01L27/00 ; G01L1/22

Abstract:
An example system comprises a microelectromechanical system (MEMS) sensor, a strain gauge, and a strain compensation circuit. The MEMS sensor is operable to generate a sensor output signal that corresponds to a sensed condition (e.g., acceleration, orientation, and/or pressure). The strain gauge is operable to generate a strain measurement signal indicative of a strain on the MEMS sensor. The strain compensation circuit is operable to modify the sensor output signal to compensate for the strain based on the strain measurement signal. The strain compensation circuit stores sensor-strain relationship data indicative of a relationship between the sensor output signal and the strain measurement signal. The strain compensation circuit is operable to use the sensor-strain relationship data for the modifying of the sensor output signal. The modification of the sensor output signal comprises one or both of: removal of an offset from the sensor signal, and application of a gain to the sensor signal.
Public/Granted literature
- US20160258825A1 MEMS SENSOR OFFSET COMPENSATION WITH STRAIN GAUGE Public/Granted day:2016-09-08
Information query