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公开(公告)号：US11301552B2
公开(公告)日：2022-04-12
申请号：US16223116
申请日：2018-12-18
Applicant: InvenSense, Inc.
Inventor： Ilya Gurin , Karthik Katingari
Abstract: A medical device comprises a surface, an ultrasonic sensor, and a processor. The surface is configured to interact with skin of a patient during operation of the medical device. The ultrasonic sensor is disposed beneath the surface and configured to ultrasonically measure data with respect to a region above the surface. The processor is coupled with the ultrasonic sensor. Responsive to detection of a finger in contact with the surface, the processor is configured to operate the ultrasonic sensor to capture a fingerprint of the finger. Responsive to authentication that a person associated with the captured fingerprint is authorized to use the medical device, the processor is configured to activate operation of the medical device.
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公开(公告)号：US20190359479A1
公开(公告)日：2019-11-28
申请号：US16538166
申请日：2019-08-12
Applicant: INVENSENSE, INC.
Inventor： Ilya Gurin , Joseph Seeger , Matthew Thompson
Abstract: A microelectromechanical system (MEMS) sensor includes a MEMS layer that includes fixed and movable electrodes. In response to an in-plane linear acceleration, the movable electrodes move with respect to the fixed electrodes, and acceleration is determined based on the resulting change in capacitance. A plurality of auxiliary electrodes are located on a substrate of the MEMS sensor and below the MEMS layer, such that a capacitance between the MEMS layer and the auxiliary loads changes in response to an out-of-plane movement of the MEMS layer or a portion thereof. The MEMS sensor compensates for the acceleration value based on the capacitance sensed by the auxiliary electrodes.
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公开(公告)号：US09903718B2
公开(公告)日：2018-02-27
申请号：US14723676
申请日：2015-05-28
Applicant: InvenSense, Inc.
Inventor： Matthew J. Thompson , Ilya Gurin
IPC: G01C19/5762 , G01C19/5755 , B81B3/00
CPC classification number: G01C19/5755 , B81B3/0018 , B81B2201/02
Abstract: A system and/or method for utilizing mechanical motion limiters to control proof mass amplitude in MEMS devices (e.g., MEMS devices having resonant MEMS structures, for example various implementations of gyroscopes, magnetometers, accelerometers, etc.). As a non-limiting example, amplitude control for a MEMS gyroscope proof mass may be accomplished during normal (e.g., steady state) gyroscope operation utilizing impact stops (e.g., bump stops) of various designs. As another non-limiting example, amplitude control for a MEMS gyroscope proof mass may be accomplished utilizing non-impact limiters (e.g., springs) of various designs, for example springs exhibiting non-linear stiffness characteristics through at least a portion of their normal range of operation.
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公开(公告)号：US11174153B2
公开(公告)日：2021-11-16
申请号：US16547275
申请日：2019-08-21
Applicant: INVENSENSE, INC.
Inventor： Ilya Gurin , Matthew Julian Thompson , Vadim Tsinker
IPC: B81B7/00
Abstract: A microelectromechanical (MEMS) device may be coupled to a dielectric material at an upper planar surface or lower planar surface of the MEMS device. One or more temperature sensors may be attached to the dielectric material layer. Signals from the one or more temperature sensors may be used to determine a thermal gradient along on axis that is normal to the upper planar surface and the lower planar surface. The thermal gradient may be used to compensate for values measured by the MEMS device.
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公开(公告)号：US20200158489A1
公开(公告)日：2020-05-21
申请号：US16750650
申请日：2020-01-23
Applicant: INVENSENSE, INC.
Inventor： Ilya Gurin , Leonardo Baldasarre
Abstract: The present disclosure relates to measuring misalignment between layers of a semiconductor device. In one embodiment, a device includes a first conductive layer; a second conductive layer; one or more first electrodes embedded in the first conductive layer; one or more second electrodes embedded in the second conductive layer; a sensing circuit connected to the one or more first electrodes; and a plurality of time-varying signal sources connected to the one or more second electrodes, wherein the one or more first electrodes and the one or more second electrodes form at least a portion of a bridge structure that exhibits an electrical property that varies as a function of misalignment of the first conductive layer and the second conductive layer in an in-plane direction.
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Patent Agency Ranking
公开(公告)号：US20190113327A1
公开(公告)日：2019-04-18
申请号：US15783792
申请日：2017-10-13
Applicant: INVENSENSE, INC.
Inventor： Ilya Gurin , Leonardo Baldasarre
IPC: G01B7/31
Abstract: The present invention relates to systems and methods for measuring misalignment between layers of a semiconductor device. In one embodiment, a method includes applying an input voltage to respective ones of one or more first electrodes associated with a first conductive layer of a semiconductor device; sensing an electrical property of one or more second electrodes associated with a second conductive layer of the semiconductor device in response to applying the input voltage to the respective ones of the one or more first electrodes; and calculating a misalignment between the first conductive layer of the semiconductor device and the second conductive layer of the semiconductor device in an in-plane direction as a function of the electrical property of the one or more second electrodes.
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公开(公告)号：US09593008B2
公开(公告)日：2017-03-14
申请号：US14501792
申请日：2014-09-30
Applicant: InvenSense, Inc.
Inventor： Matthew Julian Thompson , Michael Dueweke , Ilya Gurin , Joseph Seeger
CPC classification number: B81B3/0051 , B81B7/02 , B81B2203/0118 , H02N11/002
Abstract: A MEMS sensor is disclosed. The MEMS sensor includes a MEMS structure and a substrate coupled to the MEMS structure. The substrate includes a layer of metal and a layer of dielectric material. The MEMS structure moves in response to an excitation. A first over-travel stop is formed on the substrate at a first distance from the MEMS structure. A second over-travel stop on the substrate at a second distance from the MEMS structure. At least one electrode on the substrate at a third distance from the MEMS structure. The first, second and third distances are all different.
Abstract translation: 公开了一种MEMS传感器。 MEMS传感器包括耦合到MEMS结构的MEMS结构和衬底。 衬底包括金属层和电介质材料层。 MEMS结构响应于激发而移动。 在距离MEMS结构的第一距离处，在基板上形成第一超行程挡块。 在距离MEMS结构第二距离的基板上的第二超行程停止。 在距离MEMS结构三分之一距离的衬底上的至少一个电极。 第一，第二和第三距离都是不同的。
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公开(公告)号：US20160349056A1
公开(公告)日：2016-12-01
申请号：US14723676
申请日：2015-05-28
Applicant: InvenSense, Inc.
Inventor： Matthew J. Thompson , Ilya Gurin
IPC: G01C19/5762
CPC classification number: G01C19/5755 , B81B3/0018 , B81B2201/02
Abstract: A system and/or method for utilizing mechanical motion limiters to control proof mass amplitude in MEMS devices (e.g., MEMS devices having resonant MEMS structures, for example various implementations of gyroscopes, magnetometers, accelerometers, etc.). As a non-limiting example, amplitude control for a MEMS gyroscope proof mass may be accomplished during normal (e.g., steady state) gyroscope operation utilizing impact stops (e.g., bump stops) of various designs. As another non-limiting example, amplitude control for a MEMS gyroscope proof mass may be accomplished utilizing non-impact limiters (e.g., springs) of various designs, for example springs exhibiting non-linear stiffness characteristics through at least a portion of their normal range of operation.
Abstract translation: 用于利用机械运动限制器来控制MEMS装置（例如，具有共振MEMS结构的MEMS装置，例如陀螺仪，磁力计，加速度计等的各种实现方式）中的质量幅度的系统和/或方法。 作为非限制性示例，可以在利用各种设计的冲击停止（例如，止动停止）的正常（例如，稳态）陀螺仪操作期间完成用于MEMS陀螺仪检测质量块的幅度控制。 作为另一个非限制性示例，可以使用各种设计的非冲击限制器（例如，弹簧）来实现用于MEMS陀螺仪检测质量块的幅度控制，例如通过其正常范围的至少一部分呈现非线性刚度特性的弹簧 的操作。
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公开(公告)号：US12044644B2
公开(公告)日：2024-07-23
申请号：US17559839
申请日：2021-12-22
Applicant: INVENSENSE, INC.
Inventor： Ilya Gurin
CPC classification number: G01N27/18 , G01K7/22 , G01N33/004 , H05B3/20
Abstract: A gas sensor includes a plurality of sensing resistors that vary in resistance based on ambient temperature and the presence of certain gases, such as CO2 and H2O. The responses of each of the sensing resistors vary based on a base temperature of each of the sensing resistors. The base temperatures for each of the sensing resistors and configurations of the sensing resistors are selected to emphasize a response to a gas of interest (e.g., CO2) while de-emphasizing or canceling contributions from ambient temperature and gases that are not of interest (e.g., H2O).
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公开(公告)号：US20210053820A1
公开(公告)日：2021-02-25
申请号：US16547275
申请日：2019-08-21
Applicant: INVENSENSE, INC.
Inventor： Ilya Gurin , Matthew Julian Thompson , Vadim Tsinker
IPC: B81B7/00
Abstract: A microelectromechanical (MEMS) device may be coupled to a dielectric material at an upper planar surface or lower planar surface of the MEMS device. One or more temperature sensors may be attached to the dielectric material layer. Signals from the one or more temperature sensors may be used to determine a thermal gradient along on axis that is normal to the upper planar surface and the lower planar surface. The thermal gradient may be used to compensate for values measured by the MEMS device.
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