Invention Grant
- Patent Title: Epitaxial growth of high quality vanadium dioxide films with template engineering
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Application No.: US14974178Application Date: 2015-12-18
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Publication No.: US09627490B1Publication Date: 2017-04-18
- Inventor: Chang-Beom Eom , Daesu Lee
- Applicant: Wisconsin Alumni Research Foundation
- Agency: Bell & Manning, LLC
- Main IPC: H01L29/24
- IPC: H01L29/24 ; H01L21/02 ; H01L21/36 ; H03K17/56 ; H01L29/78 ; H01L29/66 ; H01L29/10 ; H03K17/687 ; H01L45/00 ; H03K17/51
Abstract:
Layered oxide structures comprising an overlayer of high quality VO2 and methods of fabricating the layered oxide structures are provided. Also provided are high-speed switches comprising the layered structures and methods of operating the high-speed switches. The layered oxide structures include high quality VO2 epitaxial films on isostructural SnO2 growth templates.
Information query
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