公开(公告)号：US20190155063A1

公开(公告)日：2019-05-23

申请号：US16237804

申请日：2019-01-02

Applicant: Wisconsin Alumni Research Foundation

Inventor： Zhenqiang Ma ,  Chang-Beom Eom ,  Jaeseong Lee ,  Daesu Lee ,  Sang June Cho ,  Dong Liu

IPC: G02F1/00 ,  H01P3/00 ,  G02F1/01 ,  G02F1/313

Abstract: Switches for electromagnetic radiation, including radiofrequency switches and optical switches, are provided. Also provided are methods of using the switches. The switches incorporate layers of high quality VO2 that are composed of a plurality of connected crystalline VO2 domains having the same crystal structure and orientation.

公开(公告)号：US10216013B2

公开(公告)日：2019-02-26

申请号：US15451745

申请日：2017-03-07

Applicant: Wisconsin Alumni Research Foundation

Inventor： Zhenqiang Ma ,  Chang-Beom Eom ,  Jaeseong Lee ,  Daesu Lee ,  Sang June Cho ,  Dong Liu

IPC: G02F1/01 ,  G02F1/00 ,  G02F1/313 ,  H01P3/00

Abstract: Switches for electromagnetic radiation, including radiofrequency switches and optical switches, are provided. Also provided are methods of using the switches. The switches incorporate layers of high quality VO2 that are composed of a plurality of connected crystalline VO2 domains having the same crystal structure and orientation.

公开(公告)号：US09972687B1

公开(公告)日：2018-05-15

申请号：US15464536

申请日：2017-03-21

Applicant: Wisconsin Alumni Research Foundation

Inventor： Chang-Beom Eom ,  Daesu Lee

IPC: H01L29/24 ,  H01L21/36 ,  H01L29/78 ,  H01L29/66 ,  H01L29/10 ,  H03K17/51 ,  H01L45/00 ,  H01L21/02 ,  H03K17/687

CPC classification number: H01L29/24 ,  H01L21/02414 ,  H01L21/02483 ,  H01L21/02488 ,  H01L21/02513 ,  H01L21/02565 ,  H01L21/02631 ,  H01L29/1033 ,  H01L29/1079 ,  H01L29/66969 ,  H01L29/78 ,  H01L29/7869 ,  H01L45/065 ,  H01L45/1206 ,  H01L45/146 ,  H03K17/04 ,  H03K17/51 ,  H03K17/687

Abstract: Layers of high quality VO2 and methods of fabricating the layers of VO2 are provided. The layers are composed of a plurality of connected crystalline VO2 domains having the same crystal structure and the same epitaxial orientation.

公开(公告)号：US11335781B2

公开(公告)日：2022-05-17

申请号：US15591454

申请日：2017-05-10

Applicant: Wisconsin Alumni Research Foundation

Inventor： Chang-Beom Eom ,  Daesu Lee

IPC: H01L29/24 ,  H01L45/00 ,  H01L29/45 ,  H01L29/94 ,  H01L29/861 ,  H01L29/786 ,  H03K17/687 ,  H01L49/00

Abstract: Heterostructures that include a bilayer composed of epitaxial layers of vanadium dioxide having different rutile-to-monoclinic phase transition temperatures are provided. Also provided are electrical switches that incorporate the heterostructures. The bilayers are characterized in that they undergo a single-step, collective, metal-insulator transition at an electronic transition temperature. At temperatures below the electronic transition temperature, the layer of vanadium dioxide having the higher rutile-to-monoclinic phase transition temperature has an insulating monoclinic crystalline phase, which is converted to a metallic monoclinic crystalline phase at temperatures above the electronic transition temperature.

公开(公告)号：US10649240B2

公开(公告)日：2020-05-12

申请号：US16237804

申请日：2019-01-02

Applicant: Wisconsin Alumni Research Foundation

Inventor： Zhenqiang Ma ,  Chang-Beom Eom ,  Jaeseong Lee ,  Daesu Lee ,  Sang June Cho ,  Dong Liu

IPC: G02F1/00 ,  G02F1/01 ,  G02F1/313 ,  H01P3/00

Abstract: Switches for electromagnetic radiation, including radiofrequency switches and optical switches, are provided. Also provided are methods of using the switches. The switches incorporate layers of high quality VO2 that are composed of a plurality of connected crystalline VO2 domains having the same crystal structure and orientation.

公开(公告)号：US20180122910A1

公开(公告)日：2018-05-03

申请号：US15464536

申请日：2017-03-21

Applicant: Wisconsin Alumni Research Foundation

Inventor： Chang-Beom Eom ,  Daesu Lee

IPC: H01L29/24 ,  H03K17/687 ,  H01L21/02 ,  H01L29/10 ,  H01L29/66 ,  H01L29/78 ,  H01L45/00 ,  H03K17/51

CPC classification number: H01L29/24 ,  H01L21/02414 ,  H01L21/02483 ,  H01L21/02488 ,  H01L21/02513 ,  H01L21/02565 ,  H01L21/02631 ,  H01L29/1033 ,  H01L29/1079 ,  H01L29/66969 ,  H01L29/78 ,  H01L29/7869 ,  H01L45/065 ,  H01L45/1206 ,  H01L45/146 ,  H03K17/04 ,  H03K17/51 ,  H03K17/687

Abstract: Layers of high quality VO2 and methods of fabricating the layers of VO2 are provided. The layers are composed of a plurality of connected crystalline VO2 domains having the same crystal structure and the same epitaxial orientation.

公开(公告)号：US09627490B1

公开(公告)日：2017-04-18

申请号：US14974178

申请日：2015-12-18

Applicant: Wisconsin Alumni Research Foundation

Inventor： Chang-Beom Eom ,  Daesu Lee

IPC: H01L29/24 ,  H01L21/02 ,  H01L21/36 ,  H03K17/56 ,  H01L29/78 ,  H01L29/66 ,  H01L29/10 ,  H03K17/687 ,  H01L45/00 ,  H03K17/51

CPC classification number: H01L29/24 ,  H01L21/02414 ,  H01L21/02483 ,  H01L21/02488 ,  H01L21/02513 ,  H01L21/02565 ,  H01L21/02631 ,  H01L29/1033 ,  H01L29/1079 ,  H01L29/66969 ,  H01L29/78 ,  H01L29/7869 ,  H01L45/065 ,  H01L45/1206 ,  H01L45/146 ,  H03K17/04 ,  H03K17/51 ,  H03K17/687

Abstract: Layered oxide structures comprising an overlayer of high quality VO2 and methods of fabricating the layered oxide structures are provided. Also provided are high-speed switches comprising the layered structures and methods of operating the high-speed switches. The layered oxide structures include high quality VO2 epitaxial films on isostructural SnO2 growth templates.

公开(公告)号：US20180331188A1

公开(公告)日：2018-11-15

申请号：US15591454

申请日：2017-05-10

Applicant: Wisconsin Alumni Research Foundation

Inventor： Chang-Beom Eom ,  Daesu Lee

IPC: H01L29/24 ,  H01L29/45 ,  H01L29/94 ,  H01L29/861 ,  H01L29/786 ,  H03K17/687

CPC classification number: H01L29/24 ,  H01L29/45 ,  H01L29/7869 ,  H01L29/8611 ,  H01L29/94 ,  H03K17/687

Abstract: Heterostructures that include a bilayer composed of epitaxial layers of vanadium dioxide having different rutile-to-monoclinic phase transition temperatures are provided. Also provided are electrical switches that incorporate the heterostructures. The bilayers are characterized in that they undergo a single-step, collective, metal-insulator transition at an electronic transition temperature. At temperatures below the electronic transition temperature, the layer of vanadium dioxide having the higher rutile-to-monoclinic phase transition temperature has an insulating monoclinic crystalline phase, which is converted to a metallic monoclinic crystalline phase at temperatures above the electronic transition temperature.

公开(公告)号：US20180259796A1

公开(公告)日：2018-09-13

申请号：US15451745

申请日：2017-03-07

Applicant: Wisconsin Alumni Research Foundation

Inventor： Zhenqiang Ma ,  Chang-Beom Eom ,  Jaeseong Lee ,  Daesu Lee ,  Sang June Cho ,  Dong Liu

IPC: G02F1/00 ,  H01P3/00 ,  G02F1/01 ,  G02F1/313

CPC classification number: G02F1/0054 ,  G02F1/0147 ,  G02F1/313 ,  G02F2202/105 ,  H01P3/003

Abstract: Switches for electromagnetic radiation, including radiofrequency switches and optical switches, are provided. Also provided are methods of using the switches. The switches incorporate layers of high quality VO2 that are composed of a plurality of connected crystalline VO2 domains having the same crystal structure and orientation.