Invention Grant
- Patent Title: System and method to inhibit erasing of portion of sector of split gate flash memory cells
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Application No.: US14486687Application Date: 2014-09-15
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Publication No.: US09633735B2Publication Date: 2017-04-25
- Inventor: Jinho Kim , Nhan Do , Yuri Tkachev , Kai Man Yue , Xiaozhou Qian , Ning Bai
- Applicant: Silicon Storage Technology, Inc.
- Applicant Address: US CA San Jose
- Assignee: Silicon Storage Technology, Inc.
- Current Assignee: Silicon Storage Technology, Inc.
- Current Assignee Address: US CA San Jose
- Agency: DLA Piper LLP (US)
- Priority: CN201410447574 20140722
- Main IPC: G11C16/04
- IPC: G11C16/04 ; G11C16/14 ; G11C16/12 ; G11C29/02
Abstract:
A system and method to inhibit the erasing of a portion of a sector of split gate flash memory cells while allowing the remainder of the sector to be erased is disclosed. The inhibiting is controlled by control logic that applies one or more bias voltages to the portion of the sector whose erasure is to be inhibited.
Public/Granted literature
- US20160027517A1 System And Method To Inhibit Erasing Of Portion Of Sector Of Split Gate Flash Memory Cells Public/Granted day:2016-01-28
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