Invention Grant
- Patent Title: Special construct for continuous non-uniform RX FinFET standard cells
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Application No.: US15063563Application Date: 2016-03-08
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Publication No.: US09634003B2Publication Date: 2017-04-25
- Inventor: Navneet Jain , Juhan Kim , Andy Nguyen , Mahbub Rashed
- Applicant: GLOBALFOUNDRIES Inc.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES INC.
- Current Assignee: GLOBALFOUNDRIES INC.
- Current Assignee Address: KY Grand Cayman
- Agency: Ditthavong & Steiner, P.C.
- Main IPC: H01L27/088
- IPC: H01L27/088 ; H01L21/8234 ; H01L29/66 ; H01L29/08 ; H01L27/02 ; H01L23/528 ; H01L21/8238

Abstract:
Methods for abutting two cells with different sized diffusion regions and the resulting devices are provided. Embodiments include abutting a first cell having first drain and source diffusion regions and a second cell having second drain and source diffusion regions, larger than the first diffusion regions, by: forming a dummy gate at a boundary between the two cells; forming a continuous drain diffusion region having an upper portion crossing the dummy gate and encompassing the entire first drain diffusion region and part of the second drain diffusion region and having a lower portion beginning over the dummy gate and encompassing a remainder of the second drain diffusion region; forming a continuous source diffusion region that is the mirror image of the continuous drain diffusion region; and forming a poly-cut mask over the dummy gate between, but separated from, the continuous drain and source diffusion regions.
Public/Granted literature
- US20160225763A1 SPECIAL CONSTRUCT FOR CONTINUOUS NON-UNIFORM RX FINFET STANDARD CELLS Public/Granted day:2016-08-04
Information query
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