Invention Grant
- Patent Title: Interfused nanocrystals and method of preparing the same
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Application No.: US14614475Application Date: 2015-02-05
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Publication No.: US09637682B2Publication Date: 2017-05-02
- Inventor: Shin Ae Jun , Eun Joo Jang , Seong Jae Choi
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Gyeonggi-Do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Gyeonggi-Do
- Agency: Cantor Colburn LLP
- Priority: KR10-2004-0091894 20041111; KR10-2005-0079284 20050829
- Main IPC: C09K11/02
- IPC: C09K11/02 ; H01L33/30 ; H01L33/24 ; H01L33/28 ; H01L33/00 ; H01L33/06 ; B82Y20/00 ; B82Y30/00 ; C01B19/00 ; C09K11/56 ; H05B33/14 ; H01L51/50 ; C30B7/14 ; C30B29/60 ; B82Y40/00

Abstract:
Disclosed herein is a nanocrystal comprising a core comprising a first nanocrystal material, the first nanocrystal material including a Group II-VI semiconductor compound or a Group III-V semiconductor compound; a shell being disposed upon a surface of the core and comprising a second nanocrystal material, the second nanocrystal material being different from the first nanocrystal material and including a Group II-VI semiconductor compound or a Group III-V semiconductor compound; and an alloy interlayer disposed between the core and the shell, wherein the emission peak wavelength of the nanocrystal is shifted into a shorter wavelength than the emission peak wavelength of the core.
Public/Granted literature
- US20150159083A1 INTERFUSED NANOCRYSTALS AND METHOD OF PREPARING THE SAME Public/Granted day:2015-06-11
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