Invention Grant
- Patent Title: Rewritable multibit non-volatile memory with soft decode optimization
-
Application No.: US15204265Application Date: 2016-07-07
-
Publication No.: US09640253B2Publication Date: 2017-05-02
- Inventor: Kevin Michael Conley , Raul-Adrian Cernea , Eran Sharon , Idan Alrod
- Applicant: SanDisk Technologies LLC
- Applicant Address: US TX Plano
- Assignee: SanDisk Technologies LLC
- Current Assignee: SanDisk Technologies LLC
- Current Assignee Address: US TX Plano
- Agency: Vierra Magen Marcus LLP
- Main IPC: G11C16/10
- IPC: G11C16/10 ; G11C11/56 ; G11C16/34 ; G11C16/08 ; G06F11/10 ; G11C16/04

Abstract:
A non-volatile memory system including multi-level storage optimized for ramp sensing and soft decoding is provided. Sensing is performed at a higher bit resolution than an original user data encoding to improve the accuracy of reading state information from non-volatile storage elements. Higher resolution state information is used for decoding the original user data to improve read performance through improved error handling. Ramp sensing is utilized to determine state information by applying a continuous input scanning sense voltage that spans a range of read compare points. Full sequence programming is enabled as is interleaved coding of the user data over all of the data bit sets associated with the storage elements.
Public/Granted literature
- US20160314834A1 Rewritable Multibit Non-Volatile Memory With Soft Decode Optimization Public/Granted day:2016-10-27
Information query