公开(公告)号：US20170185299A1

公开(公告)日：2017-06-29

申请号：US15459578

申请日：2017-03-15

Applicant: SanDisk Technologies LLC

Inventor： Kevin Michael Conley ,  Raul-Adrian Cernea ,  Eran Sharon ,  Idan Alrod

IPC: G06F3/06 ,  G11C16/08 ,  G11C29/52 ,  G11C16/34 ,  G06F11/10 ,  G11C11/56 ,  G11C16/04

CPC classification number: G06F3/061 ,  G06F3/0619 ,  G06F3/0659 ,  G06F3/0679 ,  G06F11/1012 ,  G06F11/1068 ,  G11C11/5628 ,  G11C11/5635 ,  G11C11/5642 ,  G11C16/0483 ,  G11C16/08 ,  G11C16/107 ,  G11C16/3459 ,  G11C29/52

Abstract: A non-volatile memory system including multi-level storage optimized for ramp sensing and soft decoding is provided. Sensing is performed at a higher bit resolution than an original user data encoding to improve the accuracy of reading state information from non-volatile storage elements. Higher resolution state information is used for decoding the original user data to improve read performance through improved error handling. Ramp sensing is utilized to determine state information by applying a continuous input scanning sense voltage that spans a range of read compare points. Full sequence programming is enabled as is interleaved coding of the user data over all of the data bit sets associated with the storage elements.

公开(公告)号：US09946468B2

公开(公告)日：2018-04-17

申请号：US15459578

申请日：2017-03-15

Applicant: SanDisk Technologies LLC

Inventor： Kevin Michael Conley ,  Raul-Adrian Cernea ,  Eran Sharon ,  Idan Alrod

IPC: G11C16/26 ,  G06F3/06 ,  G11C11/56 ,  G11C16/08 ,  G11C16/04 ,  G11C16/34 ,  G06F11/10 ,  G11C29/52

CPC classification number: G06F3/061 ,  G06F3/0619 ,  G06F3/0659 ,  G06F3/0679 ,  G06F11/1012 ,  G06F11/1068 ,  G11C11/5628 ,  G11C11/5635 ,  G11C11/5642 ,  G11C16/0483 ,  G11C16/08 ,  G11C16/107 ,  G11C16/3459 ,  G11C29/52

Abstract: A non-volatile memory system including multi-level storage optimized for ramp sensing and soft decoding is provided. Sensing is performed at a higher bit resolution than an original user data encoding to improve the accuracy of reading state information from non-volatile storage elements. Higher resolution state information is used for decoding the original user data to improve read performance through improved error handling. Ramp sensing is utilized to determine state information by applying a continuous input scanning sense voltage that spans a range of read compare points. Full sequence programming is enabled as is interleaved coding of the user data over all of the data bit sets associated with the storage elements.

公开(公告)号：US09640253B2

公开(公告)日：2017-05-02

申请号：US15204265

申请日：2016-07-07

Applicant: SanDisk Technologies LLC

Inventor： Kevin Michael Conley ,  Raul-Adrian Cernea ,  Eran Sharon ,  Idan Alrod

IPC: G11C16/10 ,  G11C11/56 ,  G11C16/34 ,  G11C16/08 ,  G06F11/10 ,  G11C16/04

CPC classification number: G06F3/061 ,  G06F3/0619 ,  G06F3/0659 ,  G06F3/0679 ,  G06F11/1012 ,  G06F11/1068 ,  G11C11/5628 ,  G11C11/5635 ,  G11C11/5642 ,  G11C16/0483 ,  G11C16/08 ,  G11C16/107 ,  G11C16/3459 ,  G11C29/52

Abstract: A non-volatile memory system including multi-level storage optimized for ramp sensing and soft decoding is provided. Sensing is performed at a higher bit resolution than an original user data encoding to improve the accuracy of reading state information from non-volatile storage elements. Higher resolution state information is used for decoding the original user data to improve read performance through improved error handling. Ramp sensing is utilized to determine state information by applying a continuous input scanning sense voltage that spans a range of read compare points. Full sequence programming is enabled as is interleaved coding of the user data over all of the data bit sets associated with the storage elements.

公开(公告)号：US20160314834A1

公开(公告)日：2016-10-27

申请号：US15204265

申请日：2016-07-07

Applicant: SanDisk Technologies LLC

Inventor： Kevin Michael Conley ,  Raul-Adrian Cernea ,  Eran Sharon ,  Idan Alrod

IPC: G11C11/56 ,  G11C16/08 ,  G11C16/04 ,  G11C16/34

CPC classification number: G06F3/061 ,  G06F3/0619 ,  G06F3/0659 ,  G06F3/0679 ,  G06F11/1012 ,  G06F11/1068 ,  G11C11/5628 ,  G11C11/5635 ,  G11C11/5642 ,  G11C16/0483 ,  G11C16/08 ,  G11C16/107 ,  G11C16/3459 ,  G11C29/52

Abstract: A non-volatile memory system including multi-level storage optimized for ramp sensing and soft decoding is provided. Sensing is performed at a higher bit resolution than an original user data encoding to improve the accuracy of reading state information from non-volatile storage elements. Higher resolution state information is used for decoding the original user data to improve read performance through improved error handling. Ramp sensing is utilized to determine state information by applying a continuous input scanning sense voltage that spans a range of read compare points. Full sequence programming is enabled as is interleaved coding of the user data over all of the data bit sets associated with the storage elements.