- 专利标题： MOSFET with asymmetric self-aligned contact
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申请号： US15254096申请日： 2016-09-01
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公开(公告)号： US09640436B1公开(公告)日： 2017-05-02
- 发明人: Kangguo Cheng , Xin Miao , Ruilong Xie , Tenko Yamashita
- 申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION , GlobalFoundries, Inc.
- 申请人地址： US NY Armonk
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址： US NY Armonk
- 代理机构： Cantor Colburn LLP
- 代理商 Vazken Alexanian
- 主分类号： H01L21/70
- IPC分类号： H01L21/70 ; H01L21/768 ; H01L23/522 ; H01L29/66 ; H01L23/532 ; H01L23/528
摘要：
A semiconductor device includes a source and drain on a substrate; a first and second gate on the source, and the second gate and a third gate on the drain; a source contact over the source and between the first and second gates, the source contact including first and second portions, the first portion in contact with the source and extending between the first and second gates, and the second portion contacting the first portion and extending over the first and second gates; and a drain contact formed over the drain and between the second and third gates, the drain contact including first and second portions, the first portion contacting the drain, extending between second and third gates, and recessed with respect to the first portion of the source contact, and the second portion in contact with the first portion and extending between and over the second and third gates.
公开/授权文献
- US20170140987A1 MOSFET WITH ASYMMETRIC SELF-ALIGNED CONTACT 公开/授权日：2017-05-18
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