Invention Grant
- Patent Title: Method of forming a resonator
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Application No.: US14932303Application Date: 2015-11-04
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Publication No.: US09641153B2Publication Date: 2017-05-02
- Inventor: Thoralf Kautzsch , Heiko Froehlich , Mirko Vogt , Maik Stegemann , Thomas Santa , Markus Burian
- Applicant: Infineon Technologies Dresden GmbH
- Applicant Address: DE Dresden
- Assignee: Infineon Technologies Dresden GmbH
- Current Assignee: Infineon Technologies Dresden GmbH
- Current Assignee Address: DE Dresden
- Agency: Schiff Hardin LLP
- Main IPC: H03H9/24
- IPC: H03H9/24 ; H03H9/02 ; B81B3/00 ; B81C1/00 ; H03H3/007

Abstract:
A method of forming a resonator by providing a first layer; forming a sacrificial layer on the first layer; forming a capping layer on the sacrificial layer; forming at least one etching aperture in the capping layer; forming at least one additional aperture having a different size than the at least one etching aperture; forming a cavity and releasing a resonator structure within the cavity by removing the sacrificial layer by etching via the at least one etching aperture; sealing the at least one etching aperture; and forming a lining in the at least one additional aperture.
Public/Granted literature
- US20160126926A1 MICROELECTROMECHANICAL RESONATORS Public/Granted day:2016-05-05
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