Invention Grant
- Patent Title: Bandwidth limiting methods for GaN power transistors
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Application No.: US14289080Application Date: 2014-05-28
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Publication No.: US09641163B2Publication Date: 2017-05-02
- Inventor: Mitchell Flowers , Simon Wood , James W. Milligan
- Applicant: Cree, Inc.
- Applicant Address: US NC Durham
- Assignee: Cree, Inc.
- Current Assignee: Cree, Inc.
- Current Assignee Address: US NC Durham
- Agency: Myers Bigel, P.A.
- Main IPC: H01L27/06
- IPC: H01L27/06 ; H03K5/125 ; H01L23/495 ; H03F3/21 ; H01L23/433 ; H03F1/56 ; H03F3/195 ; H01L23/66 ; H01L23/31

Abstract:
A transistor package includes a transistor and one or more bandwidth limiting matching networks. The one or more bandwidth limiting matching networks are coupled to one of a control contact and an output contact of the transistor in order to limit the gain response of the transistor outside of a predetermined frequency band. Specifically, the transistor package has a gain roll-off greater than 0.5 dB within 200 MHz of the predetermined frequency band, while providing signal losses less than 1.0 dB inside the predetermined frequency band at a power level greater than 240 W. By providing the bandwidth limiting matching networks in the transistor package, the gain response of the transistor may be appropriately limited in order to comply with the spectral masking requirements of one or more wireless communications standards, for example, Long Term Evolution (LTE) standards.
Public/Granted literature
- US20150349727A1 BANDWIDTH LIMITING METHODS FOR GAN POWER TRANSISTORS Public/Granted day:2015-12-03
Information query
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