公开(公告)号：US09641163B2

公开(公告)日：2017-05-02

申请号：US14289080

申请日：2014-05-28

Applicant: Cree, Inc.

Inventor： Mitchell Flowers ,  Simon Wood ,  James W. Milligan

IPC: H01L27/06 ,  H03K5/125 ,  H01L23/495 ,  H03F3/21 ,  H01L23/433 ,  H03F1/56 ,  H03F3/195 ,  H01L23/66 ,  H01L23/31

CPC classification number: H03K5/125 ,  H01L23/3107 ,  H01L23/4334 ,  H01L23/49513 ,  H01L23/49562 ,  H01L23/66 ,  H01L2223/6655 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2924/181 ,  H03F1/565 ,  H03F3/195 ,  H03F3/211 ,  H03F2200/451 ,  H03F2203/21103 ,  H03F2203/21106 ,  H03F2203/21139 ,  H03F2203/21142 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/00

Abstract: A transistor package includes a transistor and one or more bandwidth limiting matching networks. The one or more bandwidth limiting matching networks are coupled to one of a control contact and an output contact of the transistor in order to limit the gain response of the transistor outside of a predetermined frequency band. Specifically, the transistor package has a gain roll-off greater than 0.5 dB within 200 MHz of the predetermined frequency band, while providing signal losses less than 1.0 dB inside the predetermined frequency band at a power level greater than 240 W. By providing the bandwidth limiting matching networks in the transistor package, the gain response of the transistor may be appropriately limited in order to comply with the spectral masking requirements of one or more wireless communications standards, for example, Long Term Evolution (LTE) standards.

公开(公告)号：US20150349727A1

公开(公告)日：2015-12-03

申请号：US14289080

申请日：2014-05-28

Applicant: Cree, Inc.

Inventor： Mitchell Flowers ,  Simon Wood ,  James W. Milligan

IPC: H03F1/56 ,  H01L29/778 ,  H01L27/06 ,  H03K5/125 ,  H01L23/495 ,  H03F3/19 ,  H03F3/21 ,  H01L29/20 ,  H01L23/31

CPC classification number: H03K5/125 ,  H01L23/3107 ,  H01L23/4334 ,  H01L23/49513 ,  H01L23/49562 ,  H01L23/66 ,  H01L2223/6655 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2924/181 ,  H03F1/565 ,  H03F3/195 ,  H03F3/211 ,  H03F2200/451 ,  H03F2203/21103 ,  H03F2203/21106 ,  H03F2203/21139 ,  H03F2203/21142 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/00

Abstract: A transistor package includes a transistor and one or more bandwidth limiting matching networks. The one or more bandwidth limiting matching networks are coupled to one of a control contact and an output contact of the transistor in order to limit the gain response of the transistor outside of a predetermined frequency band. Specifically, the transistor package has a gain roll-off greater than 0.5 dB within 200 MHz of the predetermined frequency band, while providing signal losses less than 1.0 dB inside the predetermined frequency band at a power level greater than 240 W. By providing the bandwidth limiting matching networks in the transistor package, the gain response of the transistor may be appropriately limited in order to comply with the spectral masking requirements of one or more wireless communications standards, for example, Long Term Evolution (LTE) standards.

Abstract translation: 晶体管封装包括晶体管和一个或多个带宽限制匹配网络。 一个或多个带宽限制匹配网络耦合到晶体管的控制触点和输出触点中的一个，以限制晶体管在预定频带之外的增益响应。 具体地，晶体管封装在预定频带的200MHz内具有大于0.5dB的增益滚降，同时在大于240W的功率电平下在预定频带内提供小于1.0dB的信号损耗。通过提供带宽 限制晶体管封装中的匹配网络，可以适当地限制晶体管的增益响应，以便符合一个或多个无线通信标准（例如长期演进（LTE））标准的频谱屏蔽要求。

公开(公告)号：US09947616B2

公开(公告)日：2018-04-17

申请号：US15608048

申请日：2017-05-30

Applicant: Cree, Inc.

Inventor： Simon M. Wood ,  James Milligan ,  Mitchell Flowers ,  Donald Farrell

IPC: H01L23/52 ,  H01L23/522 ,  H01L29/20 ,  H01L29/205 ,  H01L29/417 ,  H01L29/423 ,  H01L29/778 ,  H01L23/528 ,  H01L23/66 ,  H03F3/195 ,  H03F1/56

CPC classification number: H01L23/5221 ,  H01L23/5283 ,  H01L23/66 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/41758 ,  H01L29/42316 ,  H01L29/7787 ,  H01L2223/6655 ,  H01L2223/6683 ,  H03F1/56 ,  H03F3/195 ,  H03F2200/222 ,  H03F2200/318 ,  H03F2200/387

Abstract: Monolithic microwave integrated circuits are provided that include a substrate having a transistor and at least one additional circuit formed thereon. The transistor includes a drain contact extending in a first direction, a source contact extending in the first direction in parallel to the drain contact, a gate finger extending in the first direction between the source contact and the drain contact and a gate jumper extending in the first direction. The gate jumper conductively connects to the gate finger at two or more locations that are spaced apart from each other along the first direction.

公开(公告)号：US20170271258A1

公开(公告)日：2017-09-21

申请号：US15608048

申请日：2017-05-30

Applicant: Cree, Inc.

Inventor： Simon M. Wood ,  James Milligan ,  Mitchell Flowers ,  Donald Farrell

IPC: H01L23/522 ,  H01L29/205 ,  H01L29/417 ,  H03F1/56 ,  H01L29/778 ,  H01L23/528 ,  H01L23/66 ,  H03F3/195 ,  H01L29/20 ,  H01L29/423

CPC classification number: H01L23/5221 ,  H01L23/5283 ,  H01L23/66 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/41758 ,  H01L29/42316 ,  H01L29/7787 ,  H01L2223/6655 ,  H01L2223/6683 ,  H03F1/56 ,  H03F3/195 ,  H03F2200/222 ,  H03F2200/318 ,  H03F2200/387

Abstract: Monolithic microwave integrated circuits are provided that include a substrate having a transistor and at least one additional circuit formed thereon. The transistor includes a drain contact extending in a first direction, a source contact extending in the first direction in parallel to the drain contact, a gate finger extending in the first direction between the source contact and the drain contact and a gate jumper extending in the first direction. The gate jumper conductively connects to the gate finger at two or more locations that are spaced apart from each other along the first direction.