Invention Grant
- Patent Title: Method for making support structure for probing device
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Application No.: US14600934Application Date: 2015-01-20
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Publication No.: US09643271B2Publication Date: 2017-05-09
- Inventor: Kun-Han Hsieh , Huo-Kang Hsu , Kuan-Chun Chou , Tsung-Yi Chen , Chung-Tse Lee
- Applicant: MPI CORPORATION
- Applicant Address: TW Chu-Pei, Hsinchu Shien
- Assignee: MPI Corporation
- Current Assignee: MPI Corporation
- Current Assignee Address: TW Chu-Pei, Hsinchu Shien
- Agency: Muncy, Geissler, Olds & Lowe, P.C.
- Priority: TW103102000A 20140120
- Main IPC: B23K1/00
- IPC: B23K1/00 ; H01L23/00

Abstract:
A method for making a support structure for a probing device includes a step of providing a substrate having first internal conductive lines, a carrier having second internal conductive lines and a thickness less than 2 mm for packaging an integrated circuit chip, solder balls, and photoresist support blocks made by lithography in a way that the solder balls and the photoresist support blocks are disposed between the substrate and the carrier, the photoresist support blocks separately arranged from each other, and at least one of the photoresist support blocks is disposed between two adjacent solder balls. The method further includes a step of electrically connecting the first internal conductive lines with the second internal conductive lines respectively by soldering the carrier and the substrate with the solder balls by reflow soldering.
Public/Granted literature
- US20150206850A1 METHOD FOR MAKING SUPPORT STRUCTURE FOR PROBING DEVICE Public/Granted day:2015-07-23
Information query
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