- 专利标题： PCM memory with margin current addition and related methods
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申请号： US15225898申请日： 2016-08-02
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公开(公告)号： US09646684B1公开(公告)日： 2017-05-09
- 发明人: Emanuela Calvetti , Marcella Carissimi , Marco Pasotti
- 申请人： STMICROELECTRONICS S.R.L.
- 申请人地址： IT Agrate Brianza (MB)
- 专利权人： STMicroelectronics S.r.l.
- 当前专利权人： STMicroelectronics S.r.l.
- 当前专利权人地址： IT Agrate Brianza (MB)
- 代理机构： Slater Matsil, LLP
- 主分类号： G11C11/00
- IPC分类号： G11C11/00 ; G11C13/00 ; G11C11/56
摘要：
A differential PCM memory may include first and second PCM elements, and a sense amplifier circuit configured to sense a difference between first and second sense currents passing through the first and second PCM elements, respectively, during a sense operation. The differential PCM memory may include a first margin current branch coupled in parallel with the first PCM element and configured to selectively add a first margin current to the first sense current, and a second margin current branch coupled in parallel with the second PCM element and configured to selectively add a second margin current to the second sense current.
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